PBHV2160Z datasheet(5/13 Pages) NEXPERIA

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PBHV2160Z

600 V, 0.1 A NPN high-voltage low VCEsat (BISS) transistor

PBHV2160Z

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Product data sheet

24 June 2015

5 / 13

10. Characteristics

Table 7.

Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VCB = 400 V; IE = 0 A; Tamb = 25 °C

100

ICBO

collector-base cut-off

current

VCB = 400 V; IE = 0 A; Tj = 150 °C

µA

ICES

collector-emitter cut-off

current

VCE = 400 V; VBE = 0 V; Tamb = 25 °C

100

IEBO

emitter-base cut-off

current

VEB = 4.8 V; IC = 0 A; Tamb = 25 °C

100

hFE

DC current gain

VCE = 10 V; IC = 10 mA; Tamb = 25 °C

125

VCEsat

collector-emitter

saturation voltage

IC = 30 mA; IB = 6 mA; Tamb = 25 °C

125

VBEsat

base-emitter saturation

voltage

IC = 50 mA; IB = 5 mA; pulsed;

tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C

950

collector capacitance

VCB = 20 V; IE = 0 A; ie = 0 A;

f = 1 MHz; Tamb = 25 °C

1.7

emitter capacitance

VEB = 0.5 V; IC = 0 A; ic = 0 A;

f = 1 MHz; Tamb = 25 °C

aaa-013583

100

150

200

hFE

IC (mA)

10-1

103

102

(1)

(2)

(3)

VCE = 10 V

(1) Tamb = 100 °C

(2) Tamb = 25 °C

(3) Tamb = −55 °C

Fig. 4. DC current gain as a function of collector

current; typical values

aaa-014045

100

150

200

hFE

IC (mA)

10-1

103

102

(1)

(2)

(3)

Tamb = 25 °C

(1) VCE = 50 V

(2) VCE = 25 V

(3) VCE = 10 V

Fig. 5. DC current gain as a function of collector

current; typical values

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