PEMF21 datasheet(5/11 Pages) NEXPERIA

5 / 11 page

2004 Jan 12

NXP Semiconductors

Product data sheet

12 V PNP loadswitch

PEMF21

CHARACTERISTICS

Tamb = 25 °C unless otherwise specified.

Note

Pulse test: tp ≤ 300 µs; δ ≤ 0.02.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

Transistor TR1

ICBO

collector-base cut-off current

VCB = −15 V; IE = 0

−

−100

IEBO

emitter-base cut-off current

VEB = −5 V; IC = 0

−

−100

hFE

DC current gain

VCE = −2 V; IC = −10 mA

200

−

VCEsat

collector-emitter saturation voltage

IC = −200 mA; IB = −10 mA

−

−250

RCEsat

equivalent on-resistance

IC = −500 mA; IB = −50 mA; note 1 −

300

500

Ω

VBEsat

base-emitter saturation voltage

IC = −500 mA; IB = −50 mA; note 1 −

−

−1.1

VBEon

base-emitter turn-on voltage

VCE = −2 V; IC = −100 mA; note 1

−

−0.9

transition frequency

IC = −100 mA; VCE = −5 V;

f = 100 MHz

100

280

−

MHz

collector capacitance

VCB = −10 V; IE = ie = 0; f = 1 MHz −

−

Transistor TR2

ICBO

collector-base cut-off current

VCB = 50 V; IE = 0

−

100

ICEO

collector-emitter cut-off current

VCE = 30 V; IB = 0

−

µA

IEBO

emitter-base cut-off current

VEB = 5 V; IC = 0

−

400

µA

hFE

DC current gain

VCE = 5 V; IC = 5 mA

−

VCEsat

collector-emitter saturation voltage

IC = 10 mA; IB = 0.5 mA

−

300

Vi(off)

input-off voltage

VCE = 5 V; IC = 100 µA

−

0.5

Vi(on)

input-on voltage

VCE = 0.3 V; IC = 10 mA

−

input resistor

Ω

resistor ratio

0.8

1.2

collector capacitance

VCB = 10 V; IE = ie = 0; f = 1 MHz

−

2.5

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