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PEMF21 bảng dữ liệu(PDF) 4 Page - Nexperia B.V. All rights reserved

tên linh kiện PEMF21
Giải thích chi tiết về linh kiện  12 V PNP loadswitch
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PEMF21 bảng dữ liệu(HTML) 4 Page - Nexperia B.V. All rights reserved

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2004 Jan 12
3
NXP Semiconductors
Product data sheet
12 V PNP loadswitch
PEMF21
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1.
Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
Notes
1.
Transistor mounted on an FR4 printed-circuit board.
2.
Reflow soldering is the only recommended soldering method.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Transistor TR1
VCBO
collector-base voltage
open emitter
−
−15
V
VCEO
collector-emitter voltage
open base
−
−12
V
VEBO
emitter-base voltage
open collector
−
−6
V
IC
collector current (DC)
−
−500
mA
ICM
peak collector current
−
−1
A
IBM
peak base current
−
−100
mA
Ptot
total power dissipation
Tamb = 25 °C; note 1
−
200
mW
Transistor TR2
VCBO
collector-base voltage
open emitter
−
50
V
VCEO
collector-emitter voltage
open base
−
50
V
VEBO
emitter-base voltage
open collector
−
10
V
Vi
input voltage
positive
−
+40
V
negative
−
−10
V
IO
output current (DC)
−
100
mA
ICM
peak collector current
−
100
mA
Ptot
total power dissipation
Tamb = 25 °C; note 1
−
200
mW
Per device
Ptot
total power dissipation
Tamb = 25 °C; note 1
−
300
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Per device
Rth(j-a)
thermal resistance from junction to
ambient
notes 1 and 2
416
K/W



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