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RT8207LZQW bảng dữ liệu(PDF) 25 Page - Richtek Technology Corporation

tên linh kiện RT8207LZQW
Giải thích chi tiết về linh kiện  Complete DDRII/DDRIII/Low-Power DDRIII/DDRIV Memory Power Supply Controller
PDF  27 Pages
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nhà sản xuất  RICHTEK [Richtek Technology Corporation]
Trang chủ  http://www.richtek.com
Logo RICHTEK - Richtek Technology Corporation

RT8207LZQW bảng dữ liệu(HTML) 25 Page - Richtek Technology Corporation

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DS8207L/M-08 September 2016
www.richtek.com
RT8207L/M
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Copyright 2016 Richtek Technology Corporation. All rights reserved.
is a registered trademark of Richtek Technology Corporation.
VLDOIN should be connected to VDDQ output with short
and wide trace. If different power source is used for
VLDOIN, an input bypass capacitor should be placed as
close as possible to the pin with short and wide trace.
The output capacitor for VTT should be placed close to
the pin with short and wide connection in order to avoid
additional ESR and/or ESL of the trace.
It is strongly recommended to connect VTTSNS to the
positive node of VTT output capacitor(s) as a separate
trace from the high current power line to avoid additional
ESR and/or ESL. If it is needed to sense the voltage of
the point of the load, it is recommended to attach the
output capacitor(s) at that point. It is also recommended
to minimize any additional ESR and/or ESL of ground
trace between the GND pin and the output capacitor(s).
Current sense connections must always be made using
Kelvin connections to ensure an accurate signal, with
the current limit resistor located at the device.
Power sections should connect directly to ground
plane(s) using multiple vias as required for current
handling (including the chip power ground connections).
Power components should be placed as close to the IC
as possible to minimize loops and reduce losses.



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