SSM3K44MFV

2018-05-17

1

N T

1

2

3

1

2

3

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

SSM3K44MFV

High Speed Switching Applications

Analog Switch Applications

•

AEC-Q101 qualified (Note 1)

•

Compact package suitable for high-density mounting

•

Note 1: For detail information, please contact to our sales.

= 25°C)

Characteristics

Symbol

Rating

Unit

Drain-source voltage

30

V

Gate-source voltage

±

20

V

Drain current

DC

100

mA

Pulse

200

Drain power dissipation (Ta = 25°C)

150

mW

Channel temperature

150

°

C

Storage temperature

−

55 to 150

°

C

Note:

Using continuously under heavy loads (e.g. the application of

high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Total rating, mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 mm)

Marking

Equivalent Circuit

Handling Precaution

When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is

protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects

that come into direct contact with devices should be made of anti-static materials.

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-1L1B

Weight: 1.5 mg (typ.)

1. Gate

2. Source

3. Drain

VESM

1

2

3

0.8±0.05

1.2±0.05

0.5mm

0.45mm

0.45mm

0.4mm

Start of commercial production

2009-12