SSM3K35CTC

2

4.

4.

4.

4. Absolute Maximum Ratings (Note) (Unless otherwise specified, T

Absolute Maximum Ratings (Note) (Unless otherwise specified, T

Absolute Maximum Ratings (Note) (Unless otherwise specified, T

= 25

= 25

= 25 





))))

Characteristics

Drain-source voltage

Gate-source voltage

Drain current

Drain current (pulsed)

Power dissipation

Channel temperature

Storage temperature

(Note 1)

(Note 1)

(Note 2)

Symbol

Rating

20

±10

250

600

500

150

-55 to 150

Unit

V

mA

mW





Note:

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Ensure that the channel temperature does not exceed 150 .

Note:

The MOSFETs in this device are sensitive to electrostatic discharge. When handling this device, the worktables,

operators, soldering irons and other objects should be protected against anti-static discharge.

Note:

the board material, board area, board thickness and pad area. When using this device, be sure to take heat

dissipation fully into account.

2017-12-04

Rev.3.0

©2016-2017

Toshiba Electronic Devices & Storage Corporation