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SSM3K35CTC bảng dữ liệu(PDF) 4 Page - Toshiba Semiconductor

tên linh kiện SSM3K35CTC
Giải thích chi tiết về linh kiện  MOSFETs Silicon N-Channel MOS
PDF  9 Pages
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nhà sản xuất  TOSHIBA [Toshiba Semiconductor]
Trang chủ  http://www.semicon.toshiba.co.jp/eng
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SSM3K35CTC bảng dữ liệu(HTML) 4 Page - Toshiba Semiconductor

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SSM3K35CTC
4
5.4.
5.4.
5.4.
5.4. Gate Charge Characteristics (Unless otherwise specified, T
Gate Charge Characteristics (Unless otherwise specified, T
Gate Charge Characteristics (Unless otherwise specified, T
Gate Charge Characteristics (Unless otherwise specified, Taaaa = 25
= 25
= 25
= 25 
))))
Characteristics
Total gate charge (gate-source plus gate-drain)
Gate-source charge 1
Gate-drain charge
Symbol
Qg
Qgs1
Qgd
Test Condition
VDD = 10 V, ID = 200 mA,
VGS = 4.5 V
Min
Typ.
0.34
0.09
0.16
Max
Unit
nC
5.5.
5.5.
5.5.
5.5. Source-Drain Characteristics (Unless otherwise specified, T
Source-Drain Characteristics (Unless otherwise specified, T
Source-Drain Characteristics (Unless otherwise specified, T
Source-Drain Characteristics (Unless otherwise specified, Taaaa = 25
= 25
= 25
= 25 
))))
Characteristics
Diode forward voltage
(Note 1)
Symbol
VDSF
Test Condition
ID = -150 mA, VGS = 0 V
Min
Typ.
-0.8
Max
-1.2
Unit
V
Note 1: Pulse measurement.
6.
6.
6.
6. Marking
Marking
Marking
Marking
Fig.
Fig.
Fig.
Fig. 6.1
6.1
6.1
6.1 Marking
Marking
Marking
Marking
Fig.
Fig.
Fig.
Fig. 6.2
6.2
6.2
6.2 Pin Condition (top view)
Pin Condition (top view)
Pin Condition (top view)
Pin Condition (top view)
2017-12-04
Rev.3.0
©2016-2017
Toshiba Electronic Devices & Storage Corporation



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