STM32WB55CC datasheet(137/165 Pages) STMICROELECTRONICS

137 / 165 page

DS11929 Rev 3

137/165

STM32WB55xx

Electrical characteristics

152

Figure 25. Typical connection diagram using the ADC

1. Refer to Table 73: ADC characteristics for the values of RAIN, RADC and CADC.

2. Cparasitic represents the capacitance of the PCB (dependent on soldering and PCB layout quality) plus the

pad capacitance (refer to Table 68: I/O static characteristics for the value of the pad capacitance). A high

Cparasitic value will downgrade conversion accuracy. To remedy this, fADC should be reduced.

3. Refer to Table 68: I/O static characteristics for the values of Ilkg.

General PCB design guidelines

Power supply decoupling should be performed as shown in Figure 13: Power supply

scheme. The 10 nF capacitor should be ceramic (good quality) and it should be placed as

close as possible to the chip.

6.3.21

Voltage reference buffer characteristics

Table 79. VREFBUF characteristics(1)

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VDDA

Analog supply

voltage

Normal mode

VRS = 0

2.4

3.6

VRS = 1

2.8

3.6

Degraded mode(2)

VRS = 0

1.65

2.4

VRS = 1

1.65

2.8

VREFBUF_

OUT

Voltage

reference output

Normal mode

VRS = 0

2.046(3)

2.048

2.049(3)

VRS = 1

2.498(3)

2.5

2.502(3)

Degraded mode(2)

VRS = 0

VDDA-150 mV

VDDA

VRS = 1

VDDA-150 mV

VDDA

TRIM

Trim step

resolution

±0.05

±0.1

Load capacitor

0.5

1.5

µF

esr

Equivalent

series resistor

of Cload

Ω

Iload

Static load

current

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