PZP103BY datasheet(1/4 Pages) NIKOSEM

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E-19-5

N-Channel Logic Level Enhancement Mode

Field Effect Transistor

PZP103BY

SOT-323

Halogen-Free & Lead-Free

NIKO-SEM

REV1.0

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

SYMBOL

LIMITS

UNITS

Drain-Source Voltage

VDS

30

V

Gate-Source Voltage

VGS

±16

V

Continuous Drain Current

TA = 25 °C

ID

0.3

A

TA = 70 °C

0.2

Pulsed Drain Current

1,2

IDM

3

Power Dissipation

TA = 25 °C

PD

0.4

W

TA = 70 °C

0.3

Operating Junction & Storage Temperature Range

Tj, Tstg

-55 to 150

°C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

SYMBOL

TYPICAL

MAXIMUM

UNITS

Junction-to-Ambient

RJA

290

°C/W

1Pulse width limited by maximum junction temperature.

ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)

PARAMETER

SYMBOL

TEST CONDITIONS

LIMITS

UNIT

MIN TYP MAX

STATIC

Drain-Source Breakdown Voltage

V(BR)DSS

VGS = 0V, ID = 250A

30

V

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250A

0.9

1.2

1.5

Gate-Body Leakage

IGSS

VDS = 0V, VGS = ±16V

±30

A

Zero Gate Voltage Drain Current

IDSS

VDS = 16V, VGS = 0V

1

A

VDS = 10V, VGS = 0V, TJ = 70 °C

10

Drain-Source On-State

Resistance

1

RDS(ON)

VGS = 4V, ID = 0.1A

0.4

3

Ω

VGS = 2.5V, ID = 0.01A

1

6

Forward Transconductance

1

gfs

VDS = 5V, ID = 0.1A

1

S

1. GATE

2. DRAIN

3. SOURCE

PRODUCT SUMMARY

V(BR)DSS

RDS(ON)

ID

30

3Ω

0.3A

Số phần tương tự - PZP103BY

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