PC015BDA datasheet(1/4 Pages) NIKOSEM

tên linh kiện	PC015BDA

Giải thích chi tiết về linh kiện	N-Channel Enhancement Mode Field Effect Transistor

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REV1.0

1

H-30-1

N-Channel Enhancement Mode

Field Effect Transistor

PC015BDA

TO-252

Halogen-Free & Lead-Free

NIKO-SEM

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

SYMBOL

LIMITS

UNITS

Gate-Source Voltage

VGS

±20

V

Continuous Drain Current

2

TC = 25 °C

ID

6.4

A

TC = 100 °C

4

Pulsed Drain Current

1,2

IDM

15

Avalanche Current

IAs

2.1

Avalanche Energy

L = 1mH

EAS

2.2

mJ

Power Dissipation

TC = 25 °C

PD

31

W

TC = 100 °C

12

Operating Junction & Storage Temperature Range

Tj, Tstg

-55 to 150

°C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

SYMBOL

TYPICAL

MAXIMUM

UNITS

Junction-to-Case

RJC

4

°C / W

1Pulse width limited by maximum junction temperature.

2Limited only by maximum temperature allowed.

ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)

PARAMETER

SYMBOL

TEST CONDITIONS

LIMITS

UNIT

MIN

TYP

MAX

STATIC

Drain-Source Breakdown Voltage

V(BR)DSS

VGS = 0V, ID = 250A

150

V

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250A

1.3

1.8

2.3

Gate-Body Leakage

IGSS

VDS = 0V, VGS = ±20V

±100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = 120V, VGS = 0V

1

A

VDS = 100V, VGS = 0V, TJ = 70 °C

10

1. GATE

2. DRAIN

3. SOURCE

PRODUCT SUMMARY

V(BR)DSS

RDS(ON)

ID

150V

300mΩ

6.4A

G

D

S

Số phần tương tự - PC015BDA

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Wuxi U-NIKC Semiconduct...	PC015BDA	793Kb / 8P	N-Channel Enhancement Mode MOSFET

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Mô tả tương tự - PC015BDA

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PC015BDA bảng dữ liệu(PDF) 1 Page - NIKO SEMICONDUCTOR CO., LTD.

PC015BDA bảng dữ liệu(HTML) 1 Page - NIKO SEMICONDUCTOR CO., LTD.

Số phần tương tự - PC015BDA

Mô tả tương tự - PC015BDA

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