20NM60L-TN3-R datasheet(3/6 Pages) UTC

3 / 6 page

20NM60

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 6

www.unisonic.com.tw

QW-R205-315.c



ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

VGS=0V, ID=250µA

600

Drain-Source Leakage Current

IDSS

VDS=600V, VGS=0V

µA

Forward

VDS=0V ,VGS=+30V

+100

Gate-Source Leakage Current

Reverse

IGSS

VDS=0V ,VGS=-30V

-100

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VDS= VGS, ID=250µA

2.5

4.5

Drain-Source On-State Resistance

RDS(ON)

VGS=10V, ID=10A

0.3

Ω

DYNAMIC PARAMETERS

Input Capacitance

CISS

1075

Output Capacitance

COSS

804

Reverse Transfer Capacitance

CRSS

VGS=0V, VDS=25V, f=1.0MHz

SWITCHING PARAMETERS

Total Gate Charge (Note 1)

112

Gate to Source Charge

QGS

Gate to Drain Charge

QGD

VDS=50V, VGS=10V, ID=1.3A ,

IG=100µA (Note 1, 2)

Turn-on Delay Time (Note 1)

tD(ON)

Rise Time

164

Turn-off Delay Time

tD(OFF)

305

Fall-Time

VDD=30V, VGS=10V, ID=0.5A,

RG=25Ω (Note 1, 2)

200

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Body-Diode Pulsed Current

Drain-Source Diode Forward Voltage (Note 1)

ISM

Maximum Body-Diode Continuous Current

VSD

IS =20A, VGS=0V

1.4

Reverse Recovery Time (Note 1)

trr

435

Reverse Recovery Charge

Qrr

IS =20A, VGS=0V,

dIF/dt=100A/µs

7.42

µC

Note: 1. Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2%.

2. Essentially independent of operating temperature.

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