20NM60

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 6

www.unisonic.com.tw

QW-R205-315.c

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PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

600

V

Gate-Source Voltage

±30

V

Continuous Drain Current

Continuous

20

A

Pulsed Drain Current

Pulsed (Note 2)

80

A

Avalanche Current (Note 3)

3.4

A

Avalanche energy

Single Pulsed (Note 3)

572

mJ

Peak Diode Recovery dv/dt (Note 4)

dv/dt

6.4

V/nS

TO-220

240

W

TO-220F1

58

W

Power Dissipation

TO-251/TO-252

183

W

Junction Temperature

+150

°C

Storage Temperature Range

-55 ~ +150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating: Pulse width limited by maximum junction temperature.



THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

TO-220/TO-220F1

62.5

°С/W

Junction to Ambient

TO-251/TO-252

110

°С/W

TO-220

0.52

°С/W

TO-220F1

2.16

°С/W

Junction to Case

TO-251/TO-252

0.68

°С/W