ZXLD1370EST16TC datasheet(24/40 Pages) DIODES

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24 / 40 page

ZXLD1370

Document number: DS32165 Rev. 6 - 2

24 of 40

www.diodes.com

December 2016

ZXLD1370

Application Information (Cont.)

Junction Temperature Estimation

Finally, the ZXLD1370 junction temperature can be estimated using the following equations:

Total supply current of ZXLD1370:

IQTOT

≈ IQ + f • QG

Where IQ = total quiescent current IQ-IN + IQ-AUX

Power consumed by ZXLD1370:

PIC = VIN

• (IQ + f • Qg)

Or in case of separate voltage supply, with VAUX < 15V:

PIC = VIN

• IQ-IN + VAUX • (IQ-AUX + f • Qg)

TJ =

TA + PIC

• JA = TA + PIC • (JC + CA)

Where the total quiescent current IQTOT consists of the static supply current (IQ) and the current required to charge and discharge the gate of the

power MOSFET. Moreover, the part of thermal resistance between case and ambient depends on the PCB characteristics.

0.5

1.5

2.5

-40

-25

-10

110

125

Ambient temperature (°C)

Figure 27 Power Derating Curve for ZXLD1370 Mounted on Test Board According to JESD51

ZXLD1370EST16TC bảng dữ liệu(PDF) 24 Page - Diodes Incorporated