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ZXLD1370EST16TC bảng dữ liệu(PDF) 4 Page - Diodes Incorporated |
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ZXLD1370EST16TC bảng dữ liệu(HTML) 4 Page - Diodes Incorporated |
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4 / 40 page ![]() ZXLD1370 Document number: DS32165 Rev. 6 - 2 4 of 40 www.diodes.com December 2016 © Diodes Incorporated ZXLD1370 Absolute Maximum Ratings (Note 5) (Voltages to GND, unless otherwise specified.) Symbol Parameter Rating Unit VIN Input Supply Voltage Relative to GND -0.3 to +65 V VAUX Auxiliary Supply Voltage Relative to GND -0.3 to +65 V VISM Current Monitor Input Relative to GND -0.3 to +65 V VSENSE Current Monitor Sense Voltage (VIN-VISM) -0.3 to +5 V VGATE Gate Driver Output Voltage -0.3 to +20 V IGATE Gate Driver Continuous Output Current 18 mA VFLAG Flag Output Voltage -0.3 to 40 V VPWM, VADJ, VTADJ, VGI Other Input Pins -0.3 to +5.5 V TJ Maximum Junction Temperature 150 °C TST Storage Temperature -55 to +150 °C Caution: Stresses greater than the 'Absolute Maximum Ratings' specified above, may cause permanent damage to the device. These are stress ratings only; functional operation of the device at these or any other conditions exceeding those indicated in this specification is not implied. Device reliability may be affected by exposure to absolute maximum rating conditions for extended periods of time. Semiconductor devices are ESD sensitive and may be damaged by exposure to ESD events. Suitable ESD precautions should be taken when handling and transporting these devices. Package Thermal Data Thermal Resistance Package Typical Unit Junction-to- Ambient, θJA (Note 6) TSSOP-16EP 50 °C/W Junction-to- Case, θJC TSSOP-16EP 23 °C/W Notes: 5. For correct operation SGND and PGND should always be connected together. 6. Measured on High Effective Thermal Conductivity Test Board" according JESD51. |
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