IXYS reserves the right to change limits, test conditions, and dimensions.

IXTA 75N10P IXTP 75N10P

IXTQ 75N10P

IXYS MOSFETs and IGBTs are covered by one or more

4,850,072

4,931,844

5,034,796

5,063,307

5,237,481

5,381,025

6,404,065B1 6,162,665

6,534,343

6,583,505

of the following U.S. patents:

4,835,592

4,881,106

5,017,508

5,049,961

5,187,117

5,486,715

6,306,728B1

6,259,123B1 6,306,728B1 6,683,344

Fig. 11. Capacitance

100

1000

10000

0

5

10

15

20

25

30

35

40

Ciss

Coss

Crss

f = 1MHz

Fig. 10. Gate Charge

0

1

2

3

4

5

6

7

8

9

10

0

102030

405060

70

80

Fig. 7. Input Adm ittance

0

15

30

45

60

75

90

105

120

56

7

8

9

10

11

25ºC

-40ºC

Fig. 8. Transconductance

0

4

8

12

16

20

24

28

32

36

40

0

20

40

60

80

100

120

140 160

180

25ºC

125ºC

Fig. 9. Source Current vs.

Source-To-Drain Voltage

0

20

40

60

80

100

120

140

160

180

200

0.5

0.7

0.9

1.1

1.3

1.5

1.7

Fig. 12. Forw ard-Bias

Safe Operating Area

1

10

100

1000

1

10

100

1000

100µs

1ms

DC

10ms

25µs