IXTP75N10P datasheet(2/5 Pages) IXYS

2 / 5 page

IXYS reserves the right to change limits, test conditions, and dimensions.

IXTA 75N10P IXTP 75N10P

IXTQ 75N10P

IXYS MOSFETs and IGBTs are covered by one or more

4,850,072

4,931,844

5,034,796

5,063,307

5,237,481

5,381,025

6,404,065B1 6,162,665

6,534,343

6,583,505

of the following U.S. patents:

4,835,592

4,881,106

5,017,508

5,049,961

5,187,117

5,486,715

6,306,728B1

6,259,123B1 6,306,728B1 6,683,344

Symbol

Test Conditions

Characteristic Values

J = 25°C, unless otherwise specified)

Min.

Typ.

Max.

DS= 10 V; ID = 0.5 ID25, pulse test

iss

2250

oss

GS = 0 V, VDS = 25 V, f = 1 MHz

890

rss

275

d(on)

GS = 10 V, VDS = 0.5 VDSS, ID = ID25

d(off)

G = 10 Ω (External)

g(on)

GS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25

thJC

0.42 K/W

thCK

(TO-3P)

0.21

K/W

(TO-220)

0.25

K/W

Source-Drain Diode

Characteristic Values

J = 25°C, unless otherwise specified)

Symbol

Test Conditions

Min.

typ.

Max.

GS = 0 V

Repetitive

200

F = IS, VGS = 0 V,

1.5

Pulse test, t

≤ 300 µs, duty cycle d ≤ 2 %

F = 25 A

120

-di/dt = 100 A/

µs

R = 75 V

1.4

µC

TO-3P (IXTQ) Outline

Pins: 1 - Gate

2 - Drain

TO-220 (IXTA) Outline

Dim.

Millimeter

Inches

Min.

Max.

Min.

Max.

4.06

4.83

.160

.190

2.03

2.79

.080

.110

0.51

0.99

.020

.039

1.14

1.40

.045

.055

0.46

0.74

.018

.029

1.14

1.40

.045

.055

8.64

9.65

.340

.380

7.11

8.13

.280

.320

9.65

10.29

.380

.405

6.86

8.13

.270

.320

2.54

BSC

.100

BSC

14.61

15.88

.575

.625

2.29

2.79

.090

.110

1.02

1.40

.040

.055

1.27

1.78

.050

.070

0.38

.015

0.46

0.74

.018

.029

TO-263 (IXTP) Outline

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