MHT2000N datasheet(6/21 Pages) NXP

tên linh kiện	MHT2000N

Giải thích chi tiết về linh kiện	RF LDMOS Integrated Power Amplifiers

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RF Device Data

Freescale Semiconductor, Inc.

MHT2000NR1 MHT2000GNR1

TYPICAL CHARACTERISTICS — NARROWBAND

100

Pout, OUTPUT POWER (WATTS) CW

Figure 5. Power Gain and Power Added Efficiency

versus CW Output Power

VDD =28 Vdc

IDQ1 =55 mA

IDQ2 = 195 mA

f = 2450 MHz

Figure 6. CW Output Power versus Input Power

Pin, INPUT POWER (dBm)

P3dB = 44.9 dBm (30.9 W)

P1dB = 44.5 dBm (28.05 W)

VDD =28 Vdc,IDQ1 =55 mA

IDQ2 = 195 mA, f = 2450 MHz

Ideal

Actual

100

Pout, OUTPUT POWER (WATTS) CW

Figure 7. Power Gain and Power Added Efficiency

versus CW Output Power as a Function of VD1

VD2 =28 Vdc

IDQ1 =55 mA

IDQ2 = 195 mA

f = 2450 MHz

0.1

VD1 =32 V

30 V

100

Pout, OUTPUT POWER (WATTS) CW

Figure 8. Power Gain and Power Added Efficiency

versus CW Output Power as a Function of VD2

VD1 =28 Vdc

IDQ1 =55 mA

IDQ2 = 195 mA

f = 2450 MHz

0.1

VD2 =28 V

28 V

30 V

32 V

28 V

30 V

32 V

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