AFIC901N datasheet(10/20 Pages) NXP

tên linh kiện	AFIC901N

Giải thích chi tiết về linh kiện	RF LDMOS Wideband Integrated Power Amplifier

PDF	20 Pages

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nhà sản xuất	NXP [NXP Semiconductors]

Trang chủ	http://www.nxp.com

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10 / 20 page

RF Device Data

Freescale Semiconductor, Inc.

AFIC901N

TYPICAL CHARACTERISTICS — 350–520 MHz UHF BROADBAND REFERENCE CIRCUIT

1.5

VGS2, GATE--SOURCE VOLTAGE (VOLTS)

DETAIL A

2.5

2.0

0.25

0.5

Pin =3 dBm

VDD =7.5 V, IDQ1 =10mA,f=435 MHz

1.0

1.5

VGS2, GATE--SOURCE VOLTAGE (VOLTS)

Figure 9. Output Power versus Gate--Source Voltage, 2nd Stage

4.0

3.5

3.0

2.5

2.0

0.5

2.5

VDD =7.5 V, IDQ1 =10mA,f=435 MHz

Pin =0 dBm

Pin =3 dBm

Pin =0 dBm

Detail A

FREQUENCY (MHz)

340

Figure 10. Power Gain, Drain Efficiency and Output Power

versus Frequency at a Constant Input Power

D

Gps

Pout

VDD =7.5 V, Pin =3.0 dBm, lDQ1 =10 mA, lDQ2 =30 mA

360

380 400 420 440

460

480 500 520

540

D

Pin, INPUT POWER (dBm)

--8

–6

–4

–2

VDD =7.5 Vdc, lDQ1 =10 mA, lDQ2 =30 mA

Figure 11. Power Gain, Drain Efficiency and Output Power

versus Input Power and Frequency

Gps

Pout

520 MHz

435 MHz

350 MHz

520 MHz

435 MHz

350 MHz

520 MHz

350 MHz

435 MHz

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