AFIC901N datasheet(6/20 Pages) NXP

tên linh kiện	AFIC901N

Giải thích chi tiết về linh kiện	RF LDMOS Wideband Integrated Power Amplifier

PDF	20 Pages

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nhà sản xuất	NXP [NXP Semiconductors]

Trang chủ	http://www.nxp.com

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RF Device Data

Freescale Semiconductor, Inc.

AFIC901N

TYPICAL CHARACTERISTICS — 136–174 MHz VHF BROADBAND REFERENCE CIRCUIT

175

135

Gps

FREQUENCY (MHz)

Figure 4. Power Gain, Drain Efficiency and Output Power

versus Frequency at a Constant Input Power

160

155

150

145

140

D

165

170

Pout

VDD =7.5 V, Pin =0 dBm, IDQ1 =10 mA, IDQ2 =30 mA

1.5

VGS2, GATE--SOURCE VOLTAGE (VOLTS)

Figure 5. Output Power versus Gate--Source Voltage, 2nd Stage

4.0

3.5

3.0

2.5

2.0

0.5

2.5

VDD =7.5 V, IDQ1 =10mA,f=155 MHz

Pin =0 dBm

Pin =–3 dBm

1.5

VGS2, GATE--SOURCE VOLTAGE (VOLTS)

Detail A

2.5

2.0

0.25

0.5

VDD =7.5 V, IDQ1 =10mA,f=155 MHz

Detail A

Pin =–3 dBm

Pin =0 dBm

D

Pin, INPUT POWER (dBm)

–8

–6

–4

–2

VDD =7.5 Vdc, lDQ1 =10 mA, lDQ2 =30 mA

Figure 6. Power Gain, Drain Efficiency and Output Power

versus Input Power and Frequency

Gps

Pout

175 MHz

135 MHz

155 MHz 175 MHz

135 MHz

175 MHz

135 MHz

155 MHz

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