MCC255-16IO1 datasheet(5/6 Pages) IXYS

5 / 6 page

MCC255-16io1

C [°C]

t [s]

0.001

0.01

0.1

2000

4000

6000

8000

10000

104

105

106

100 125 150

100

200

300

400

TSM

[A]

TAVM

[A]

100

125

150

100

200

300

100

200

300

400

500

100

125

150

200

400

600

500

1000

1500

2000

thKA K/W

0.03

0.06

0.1

0.15

0.2

0.3

0.4

Circuit

3xMCD255

3xMCC255 or

180 ° sin

120 °

60 °

30 °

180 ° sin

120 °

60 °

30 °

2dt

2s]

t [ms]

TAVM [A]

tot

[W]

A [°C]

tot

[W]

DAVM

]

[

A [°C]

Fig. 1 Surge overload current

T(F)SM: Crest value, t: duration

Fig. 2 I

2dt versus time

Fig. 3 Max. forward current

at case temperature

Fig. 4 Power dissipation versus on-state current and

ambient temperature (per thyristor or diode)

Fig. 6 Three phase rectifier bridge: Power dissipation

vs. direct output current and ambient temperature

VJ = 45°C

thKA K/W

0.1

0.2

0.3

0.4

0.6

0.8

1.0

limit

typ.

[V]

10-3

10-2

10-1

100

101

102

0.1

0.01

0.1

100

4: P

GM = 20 W

5: P

GM = 60 W

6: P

GM = 120 W

G [A]

[µs]

G [A]

Fig. 5 Surge overload current

T(F)SM: Crest value, t: duration

Fig. 7 Gate trigger delay time

VJ = 25°C

3: I

GT, TVJ = -40°C

2: I

GT, TVJ = 25°C

1: I

, TVJ = 140°C

80 % V

RRM

VJ = 45°C

50 Hz

VJ = 140°C

Thyristor

IXYS reserves the right to change limits, conditions and dimensions.

20170116e

Data according to IEC 60747and per semiconductor unless otherwise specified

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