MMRF1022HS datasheet(1/16 Pages) NXP

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MMRF1022HS

1

RF Device Data

Freescale Semiconductor, Inc.

RF Power LDMOS Transistor

N--Channel Enhancement--Mode Lateral MOSFET

This 63 W asymmetrical Doherty RF power LDMOS transistor is optimized

for instantaneous signal bandwidth capabilities covering the frequency range

of 2110 to 2170 MHz. This part is ideally suited for commercial and defense

communications and electronic warfare applications, such as an IED jammer.

2100 MHz

• Typical Doherty Single--Carrier W--CDMA Performance: VDD =28 Vdc,

IDQA = 500 mA, VGSB =0.5 Vdc, Pout = 63 W Avg., Input Signal

PAR = 9.9 dB @ 0.01% Probability on CCDF.

Frequency

Gps

(dB)

ηD

(%)

Output PAR

(dB)

ACPR

(dBc)

2110 MHz

16.2

51.6

7.9

–28.5

2140 MHz

16.2

51.8

7.9

–28.8

2170 MHz

16.1

50.9

7.9

–29.5

Features

• Advanced high performance in--package Doherty

• Greater negative gate--source voltage range for improved Class C operation

• Designed for digital predistortion error correction systems

Document Number: MMRF1022HS

Rev. 0, 4/2016

Freescale Semiconductor

Technical Data

2110–2170 MHz, 63 W AVG., 28 V

AIRFAST RF POWER LDMOS

TRANSISTOR

MMRF1022HS

NI--1230S--4L2L

(Top View)

RFoutA/VDSA

RFoutB/VDSB

RFinA/VGSA

RFinB/VGSB

VBWA(1)

6

3

15

24

Carrier

Peaking

Figure 1. Pin Connections

VBWB(1)

1. Device cannot operate with the VDD current

supplied through pin 3 and pin 6.

Số phần tương tự - MMRF1022HS

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