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ISL6531CBZ bảng dữ liệu(PDF) 13 Page - Renesas Technology Corp

tên linh kiện ISL6531CBZ
Giải thích chi tiết về linh kiện  Dual 5V Synchronous Buck Pulse-Width Modulator (PWM) Controller for DDRAM Memory VDDQ and VTT Termination
PDF  18 Pages
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ISL6531
FN9053 Rev 2.00
Page 13 of 18
Aug 11, 2005
capacitor to high slew-rate transient loading. Unfortunately, ESL
is not a specified parameter. Work with your capacitor supplier
and measure the capacitor’s impedance with frequency to select
a suitable component. In most cases, multiple electrolytic
capacitors of small case size perform better than a single large
case capacitor.
Output Inductor Selection
The output inductor is selected to meet the output voltage
ripple requirements and minimize the converter’s response
time to the load transient. Additionally, the output inductor for
the VTT regulator has to meet the minimum value criteria for
loop stability as described in the VTT Feedback Compensation
section. The inductor value determines the converter’s ripple
current and the ripple voltage is a function of the ripple current.
The ripple voltage and current are approximated by the
following equations:
Increasing the value of inductance reduces the ripple current
and voltage. However, the large inductance values reduce the
converter’s response time to a load transient.
One of the parameters limiting the converter’s response to a
load transient is the time required to change the inductor
current. Given a sufficiently fast control loop design, the
ISL6531 will provide either 0% or 100% duty cycle in
response to a load transient. The response time is the time
required to slew the inductor current from an initial current
value to the transient current level. During this interval the
difference between the inductor current and the transient
current level must be supplied by the output capacitor.
Minimizing the response time can minimize the output
capacitance required.
The response time to a transient is different for the application
of load and the removal of load. The following equations give
the approximate response time interval for application and
removal of a transient load:
where: ITRAN is the transient load current step, tRISE is the
response time to the application of load, and tFALL is the
response time to the removal of load. The worst case response
time can be either at the application or removal of load. Be
sure to check both of these equations at the minimum and
maximum output levels for the worst case response time.
Input Capacitor Selection
Use a mix of input bypass capacitors to control the voltage
overshoot across the MOSFETs. Use small ceramic capacitors
for high frequency decoupling and bulk capacitors to supply the
current needed each time Q1 turns on. Place the small ceramic
capacitors physically close to the MOSFETs and between the
drain of Q1 and the source of Q2.
The important parameters for the bulk input capacitor are the
voltage rating and the RMS current rating. For reliable
operation, select the bulk capacitor with voltage and current
ratings above the maximum input voltage and largest RMS
current required by the circuit. The capacitor voltage rating
should be at least 1.25 times greater than the maximum input
voltage and a voltage rating of 1.5 times is a conservative
guideline. The RMS current rating requirement for the input
capacitor of a buck regulator is approximately 1/2 the DC load
current.
The maximum RMS current required by the regulator may be
closely approximated through the following equation:
For a through hole design, several electrolytic capacitors may be
needed. For surface mount designs, solid tantalum capacitors can
be used, but caution must be exercised with regard to the
capacitor surge currentrating. These capacitors must be capable
of handling the surge-current at power-up. Some capacitor series
available from reputable manufacturers are surge current tested.
MOSFET Selection/Considerations
The ISL6531 requires two N-Channel power MOSFETs for each
PWM regulator. These should be selected based upon rDS(ON),
gate supply requirements, and thermal management
requirements.
In high-current applications, the MOSFET power dissipation,
package selection and heatsink are the dominant design factors.
The power dissipation includes two loss components; conduction
loss and switching loss. The conduction losses are the largest
component of power dissipation for both the upper and the lower
MOSFETs. These losses are distributed between the two
MOSFETs according to duty factor. The switching losses seen
when sourcing current will be different from the switching losses
seen when sinking current. The VDDQ regulator will only source
current while the VTT regulator can sink and source. When
sourcing current, the upper MOSFET realizes most of the
switching losses. The lower switch realizes most of the switching
losses when the converter is sinking current (see the equations
below). These equations assume linear voltage-current
transitions and do not adequately model power loss due the
reverse-recovery of the upper and lower MOSFET’s body diode.
The gate-charge losses are dissipated by the ISL6531 and don't
heat the MOSFETs. However, large gate-charge increases the
switching interval, tSW which increases the MOSFET switching
losses.
Ensure that both MOSFETs are within their maximum junction
temperature at high ambient temperature by calculating the
temperature rise according to package thermal-resistance
specifications. A separate heat sink may be necessary depending
I =
VIN - VOUT
fs x L
VOUT
VIN
VOUT = I x ESR
x
tRISE =
L x ITRAN
VIN - VOUT
tFALL =
L x ITRAN
VOUT
IRMS
MAX
VOUT
VIN
----------------
IOUT
MAX
2
1
12
------
VIN VOUT
–
Lfs
--------------------------------
VOUT
VIN
----------------


 2
+



=



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