Product Name

Package

Chip

Marking

BGT24AT2

VQFN32-9

T1824

BGT24AT2

Silicon Germanium 24 GHz Transmitter

MMIC

BGT24AT2

Final Data Sheet

7

Revision 3.2, 2016-01-20

1

Features

•

24 GHz signal source with 2 transmitter outputs and 1 local oscillator

output

•

External / internal phase inversion and RF pulsing capability

•

Programmable gain amplifiers (PGA) with 6 bit resolution

•

Fully integrated low phase noise VCO

•

Frequency divider with 23.5 MHz output

•

On chip RF output level and temperature sensors

•

Multiplexed output of analog sensor signals

•

Single ended RF terminals

•

Single supply voltage 3.3 V

•

Low power consumption 775 mW typ.

•

200 GHz bipolar SiGe:C technology b7hf200

•

Fully ESD protected device

•

VQFN-32-9 leadless plastic package including lead-tip-inspection (LTI) feature

•

Pb-free (RoHS compliant) package

•

AEC Q100 qualified

Description

The BGT24AT2 is a low phase noise 24 GHz ISM band multifunction signal source, manufactured in a monolithic

Silicon Germanium semiconductor process technology.

It accommodates a 24 GHz fundamental voltage controlled oscillator and a frequency divider with a division ratio

of 1024. The frequency divider output is differential.

The three individual RF outputs generate a typical output power of +10 dBm, adjustable via SPI-programmable 6

bit DAC’s. Fast pulsing and phase inversion of the transmit signal is provided either using dedicated control inputs

or the 64 bit SPI. Automatic configuration of the LO-output is possible using a dedicated logic.

RF output level sensors as well as a temperature sensor are implemented for monitoring purposes. The analog

sensor signals along with an additional optional analog input are multiplexed to one common output.

The MMIC is manufactured in a 200 GHz, 0.18

μm SiGe:C technology and is packaged in a 32 pin leadless RoHS

compliant VQFN package with LTI feature.