IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXTL2N470

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

7,157,338B2

by one or moreof the following U.S. patents: 4,860,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2 6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

V

2.1

3.5

S

C

iss

6860

pF

C

oss

V

267

pF

C

rss

105

pF

R

Gi

Integrated Gate Input Resistance

4.0



t

d(on)

40

ns

t

r

34

ns

t

d(off)

123

ns

t

f

205

ns

Q

g(on)

180

nC

Q

gs

V

34

nC

Q

gd

83

nC

R

thJC

0.56

C/W

R

thCS

0.15

C/W

Source-Drain Diode

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

I

S

V

2

A

I

SM

Repetitive, Pulse Width Limited by T

JM

8

A

V

SD

I

3

V

t

rr

I

1.75

μs

Notes: 1. Pulse test, t

 300s, duty cycle, d  2%.

2. Part must be heatsunk for high-temp Idss measurement.

Resistive Switching Times

V

R

ADVANCE TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are

derived from a subjective evaluation of the design, based upon prior knowledge and experi-

ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right

to change limits, test conditions, and dimensions without notice.