S70FS01GS datasheet(6/141 Pages) CYPRESS

6 / 141 page

S70FS01GS

Document Number: 002-03833 Rev. *C

Page 6 of 141

1.3

Glossary



BCD

= Binary Coded Decimal. A value in which each 4 bit nibble represents a decimal numeral.



Command

= All information transferred between the host system and memory during one period while CS# is low. This

includes the instruction (sometimes called an operation code or opcode) and any required address, mode bits, latency

cycles, or data.



DDP

= Dual Die Package = Two die stacked within the same package to increase the memory capacity of a single package.

Often also referred to as a Multi-Chip Package (MCP)



DDR

= Double Data Rate = When input and output are latched on every edge of SCK.



ECC

= ECC Unit = 16 byte aligned and length data groups in the main Flash array and OTP array, each of which has its

own hidden ECC syndrome to enable error correction on each group.



Flash

= the name for a type of Electrical Erase Programmable Read Only Memory (EEPROM) that erases large blocks of

memory bits in parallel, making the erase operation much faster than early EEPROM.



High

= a signal voltage level ≥ VIH or a logic level representing a binary one (“1”).



Instruction

= the 8 bit code indicating the function to be performed by a command (sometimes called an operation code or

opcode). The instruction is always the first 8 bits transferred from host system to the memory in any command.



Low

= a signal voltage level

 VIL or a logic level representing a binary zero (“0”).



LSB

= Least Significant Bit = Generally the right most bit, with the lowest order of magnitude value, within a group of bits of

a register or data value.



MSB

= Most Significant Bit = Generally the left most bit, with the highest order of magnitude value, within a group of bits of

a register or data value.



N/A

= Not Applicable. A value is not relevant to situation described.



Non-Volatile

= no power is needed to maintain data stored in the memory.



OPN

= Ordering Part Number = The alphanumeric string specifying the memory device type, density, package, factory non-

volatile configuration, etc. used to select the desired device.



Page

= 512 Byte or 256 Byte aligned and length group of data. The size assigned for a page depends on the Ordering Part

Number.



PCB

- Printed Circuit Board



bit_range_LSB]



SDR

= Single Data Rate = When input is latched on the rising edge and output on the falling edge of SCK.



Sector

= erase unit size; depending on device model and sector location this may be 4KBytes, 64KBytes or 256 KBytes



Write

= an operation that changes data within volatile or non-volatile registers bits or non-volatile Flash memory. When

changing non-volatile data, an erase and reprogramming of any unchanged non-volatile data is done, as part of the

operation, such that the non-volatile data is modified by the write operation, in the same way that volatile data is modified –

as a single operation. The non-volatile data appears to the host system to be updated by the single write command, without

the need for separate commands for erase and reprogram of adjacent, but unaffected data.

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