SUMMARY DESCRIPTION
M58LW064C is a 64 Mbit (4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7V to 3.6V) core supply. On power-up the memory defaults to Read mode with an asynchronous bus where it can be read in the same way as a non-burst Flash memory.

FEATURES SUMMARY
■ WIDE x16 DATA BUS for HIGH BANDWIDTH
■ SUPPLY VOLTAGE
    – VDD = 2.7 to 3.6V core supply voltage for Program, Erase and Read operations
    – VDDQ = 1.8 to VDD for I/O Buffers
■ SYNCHRONOUS/ASYNCHRONOUS READ
    – Synchronous Burst read
    – Asynchronous Random Read
    – Asynchronous Address Latch Controlled Read
    – Page Read
■ ACCESS TIME
    – Synchronous Burst Read up to 56MHz
    – Asynchronous Page Mode Read 110/25ns
    – Random Read 110ns
■ PROGRAMMING TIME
    – 16 Word Write Buffer
    – 12µs Word effective programming time
■ 64 UNIFORM 64 KWord MEMORY BLOCKS
■ BLOCK PROTECTION/ UNPROTECTION
■ PROGRAM and ERASE SUSPEND
■ 128bit PROTECTION REGISTER
■ COMMON FLASH INTERFACE
■ 100,000 PROGRAM/ERASE CYCLES per BLOCK
■ ELECTRONIC SIGNATURE
    – Manufacturer Code: 0020h
    – Device Code M58LW064C : 8820h