SUMMARY DESCRIPTION
The M29W641D is a 64 Mbit (4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single, low voltage, 2.7V to 3.6V VCC supply for the circuitry and a 1.8V to 3.6V VCCQ supply for the Input/Output pins. An optional 12 V VPP power supply is provided to speed up customer programming.

FEATURES SUMMARY
■ SUPPLY VOLTAGE
    – VCC = 2.7V to 3.6V Core Power Supply
    – VCCQ = 1.8V to 3.6V for Input/Output
    – VPP =12 V for Fast Program (optional)
■ ACCESS TIME: 70, 90, 100 and 120ns
■ PROGRAMMING TIME
    – 10 µs typical
    – Double Word Program option
■ 128 UNIFORM, 32-KWord MEMORY BLOCKS
■ PROGRAM/ERASE CONTROLLER
    – Embedded Program and Erase algorithms
■ ERASE SUSPEND and RESUME MODES
    – Read and Program another Block during Erase Suspend
■ UNLOCK BYPASS PROGRAM COMMAND
    – Faster Production/Batch Programming
■ WRITE PROTECT OPTIONS
    – M29W641DH: WP Pin for Write Protection of Highest Address Block
    – M29W641DL: WP Pin for Write Protection of Lowest Address Block
    – M29W641DU: No Write Protection
■ TEMPORARY BLOCK UNPROTECTION MODE
■ COMMON FLASH INTERFACE
■ EXTENDED MEMORY BLOCK
    – Extra block used as security block or to store additional information
■ LOW POWER CONSUMPTION
    – Standby and Automatic Standby
■ ELECTRONIC SIGNATURE
    – Manufacturer Code: 0020h
    – Device Code M29W641D: 22C7h