HGTG30N60C3D bảng dữ liệu(PDF) - Harris Corporation

công cụ tìm kiếm bảng dữ liệu linh kiện điện tử

ALLDATASHEET.VN

X

HGTG30N60C3D bảng dữ liệu (PDF) - Harris Corporation

HGTG30N60C3D Datasheet PDF - Harris Corporation


tên linh kiện	HGTG30N60C3D

tải về	HGTG30N60C3D tải về

kích thước tập tin	131.12 Kbytes

Page	8 Pages

nhà sản xuất	HARRIS [Harris Corporation]

Trang chủ	http://www.harris.com

Logo

Giải thích chi tiết về linh kiện

63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

HGTG30N60C3D Datasheet (PDF)

Go To PDF Page

tải về bảng dữ liệu

HGTG30N60C3D Datasheet PDF - Harris Corporation


tên linh kiện	HGTG30N60C3D

tải về	HGTG30N60C3D Click to download

kích thước tập tin	131.12 Kbytes

Page	8 Pages

nhà sản xuất	HARRIS [Harris Corporation]

Trang chủ	http://www.harris.com

Logo

Giải thích chi tiết về linh kiện	63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

HGTG30N60C3D bảng dữ liệu (HTML) - Harris Corporation

HGTG30N60C3D Datasheet HTML 1Page - Harris Corporation

HGTG30N60C3D Datasheet HTML 2Page - Harris Corporation

HGTG30N60C3D Datasheet HTML 3Page - Harris Corporation

HGTG30N60C3D Datasheet HTML 4Page - Harris Corporation

HGTG30N60C3D Datasheet HTML 5Page - Harris Corporation

HGTG30N60C3D Datasheet HTML 6Page - Harris Corporation

HGTG30N60C3D Datasheet HTML 7Page - Harris Corporation

HGTG30N60C3D Datasheet HTML 8Page - Harris Corporation

HGTG30N60C3D Thông tin chi tiết sản phẩm

Description
The HGTG30N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25°C and +150°C. The IGBT used is the development type TA49051. The diode used in anti-parallel with the IGBT is the development type TA49053. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential.

Features
• 63A, 600V at TC= +25°C
• Typical Fall Time - 230ns at TJ= +150°C
• Short Circuit Rating
• Low Conduction Loss
• Hyperfast Anti-Parallel Diode

Số phần tương tự - HGTG30N60C3D

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Intersil Corporation	HGTG30N60C3D	116Kb / 7P	63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes January 2000
Fairchild Semiconductor	HGTG30N60C3D	144Kb / 8P	63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
	HGTG30N60C3D	299Kb / 9P	63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes January 2009
	HGTG30N60C3D	299Kb / 9P	63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes January 2009

Mô tả tương tự - HGTG30N60C3D

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Harris Corporation	HGTG12N60C3D	102Kb / 7P	24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
Fairchild Semiconductor	HGTG20N60B3D	179Kb / 7P	40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
Fairchild Semiconductor	HGTG20N60C3D	123Kb / 8P	45A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
Intersil Corporation	HGTG12N60C3D	98Kb / 7P	24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode January 2000
	HGTG20N60B3D	135Kb / 6P	40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode January 2000
	HGTG30N60B3D	109Kb / 7P	60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode January 2000
	HGTG30N60C3D	116Kb / 7P	63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes January 2000
Fairchild Semiconductor	HGTG30N60C3D	144Kb / 8P	63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
Harris Corporation	HGTP3N60C3D	394Kb / 11P	6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
Fairchild Semiconductor	HGTG30N60C3D	299Kb / 9P	63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes January 2009

Giới thiệu về Harris Corporation

Harris Corporation was a Florida-based technology company that specialized in communications and information technology. The company was founded in 1895 and went through several iterations over the years, including mergers and acquisitions.

In 2019, Harris Corporation merged with L3 Technologies to form L3Harris Technologies, which is now one of the largest defense companies in the world. The company provides a wide range of products and services in the areas of aerospace, defense, communications, and intelligence.

Some of Harris Corporation's previous areas of focus included tactical radios, satellite communications systems, air traffic control systems, and cybersecurity solutions. The company's customers included the U.S. military, government agencies, and commercial organizations around the world.

*Thông tin này chỉ dành cho mục đích thông tin chung, chúng tôi sẽ không chịu trách nhiệm cho bất kỳ tổn thất hoặc thiệt hại nào do thông tin trên gây ra.

Link URL

Cho đến nay ALLDATASHEET có giúp ích cho doanh nghiệp của bạn hay không? [ DONATE ]

Alldatasheet là | Quảng cáo | Liên lạc với chúng tôi | Chính sách bảo mật | Liên kết đến bảng dữ liệu | Trao đổi link | Tìm kiếm theo nhà sản xuất
All Rights Reserved©Alldatasheet.com

Mirror Sites English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz

Family Site : ic2ic.com | icmetro.com