# CSD18532NQ5B 60V N-Channel NexFET Power MOSFET

## Features
️· Ultra-Low Qg and Qgd
️· Low Thermal Resistance
️· Avalanche Rated
️· Pb-Free Terminal Plating
️· RoHS Compliant
️· Halogen Free
️· 5mm x 6mm SON Plastic Package

## Applications
️· DC-DC Conversion
️· Secondary Side Synchronous Rectifier
️· Isolated Converter Primary Side Switch
️· Motor Control

## Description
60V, 2.7 mΩ, 5 x 6 mm SON NexFET power MOSFET designed to minimize losses in power conversion applications.

## Electrical Characteristics (TA = 25°C)
️· VDS (Drain-to-Source Voltage): 60V
️· Qg (Gate Charge Total): 49 nC (10V)
️· Qgd (Gate Charge Gate to Drain): 7.9 nC
️· RDS(on) (Drain-to-Source On-Resistance): 3.5 mΩ (VGS = 6V), 2.7 mΩ (VGS = 10V)
️· VGS(th) (Threshold Voltage): 2.8V
️· Continuous Drain Current (Package Limited): 100A
️· Continuous Drain Current (Silicon Limited): 151A

## Thermal Information
️· RθJC (Junction-to-Case Thermal Resistance): 0.8 °C/W
️· RθJA (Junction-to-Ambient Thermal Resistance): 50 °C/W

## Package Dimensions
️· 5 mm x 6 mm SON package

## Documentation & Support
️· TI E2E Community ([http://e2e.ti.com](http://e2e.ti.com))
️· Design Support ([http://support.ti.com](http://support.ti.com))
️· TI Glossary ([http://www.ti.com/lit/pdf/SLYZ022](http://www.ti.com/lit/pdf/SLYZ022))