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Part No.	2N7002BKS
Manufacturer	NEXPERIA
Size	931 Kbytes
Pages	16 pages
Description	60 V, 300 mA dual N-channel Trench MOSFET

Datasheet Summary with AI

1. General Description:

️· Device: Nexperia 2N7002BKS
️· Type: N-channel MOSFET
️· Technology: TrenchMOS
️· Application: Suitable for various applications including DC-DC converters, load switches, and general-purpose switching.

2. Key Electrical Characteristics (at specified voltages/temperatures, unless otherwise noted):

️· VDS (Drain-Source Voltage): 60 V
️· VGS (Gate-Source Voltage): 20 V
️· RDS(on) (Drain-Source On-Resistance): Low (Specific values vary with VGS and temperature; see graphs)
️· ID (Drain Current): 300 mA (continuous)
️· Threshold Voltage (VGS(th)): Approximately 1V (Varies with temperature, see graph)

3. Detailed Specifications (Selected Highlights - Refer to the datasheet for complete values):

️· Absolute Maximum Ratings:
- Drain-Source Voltage (VDS): 60 V
- Gate-Source Voltage (VGS): 20 V
- Drain Current (continuous): 300 mA
- Power Dissipation: (See datasheet)
- Channel Temperature: 150 °C
️· Dynamic Characteristics:
- Input Capacitance (Ciss): See datasheet graph
- Output Capacitance (Coss): See datasheet graph
- Reverse Transfer Capacitance (Crss): See datasheet graph
️· Thermal Characteristics:
- Thermal Resistance (Junction-to-Ambient): See datasheet

4. Electrical Characteristics (Selected Values):

Parameter Symbol Test Conditions Minimum/Typical/Maximum Unit

Drain-Source Voltage VDS VGS = 0V 60 V

Gate-Source Voltage VGS VDS = 0V 20 V

Drain Current (continuous) ID VDS = 10V, VGS = 10V 300 mA

Drain-Source On-Resistance RDS(on) VGS = 10V, ID = 300 mA Refer to Datasheet Graph Ω

Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 1 V

5. Graphs & Figures (Important to reference within the datasheet):

️· Transfer Characteristics: ID vs. VGS (at different temperatures)
️· Normalized Drain-Source On-Resistance vs. Temperature
️· Gate-Source Voltage vs. Gate Charge
️· Input, Output and Reverse Transfer Capacitances vs. VDS
️· Source Current vs. Source-Drain Voltage
️· Package Outline: SOT363 (SC-88)
️· Waveform Definitions for Gate Charge

6. Package Information:

️· Package Type: SOT363 (also known as SC-88)
️· Dimensions: Refer to the package outline drawing in Figure 38 for detailed measurements.

Important Notes:

️· Refer to the Full Datasheet: This summary is *not* a substitute for the complete datasheet. It is crucial to consult the full document for all specifications, conditions, and limitations.
️· Test Conditions: Pay close attention to the test conditions used for the measurements provided. They often significantly impact the actual performance.
️· Graphs: The graphs provide critical information about the device’s behavior that cannot be fully conveyed by numerical values alone.

Parameter	Symbol	Test Conditions	Minimum/Typical/Maximum	Unit
Drain-Source Voltage	VDS	VGS = 0V	60	V
Gate-Source Voltage	VGS	VDS = 0V	20	V
Drain Current (continuous)	ID	VDS = 10V, VGS = 10V	300	mA
Drain-Source On-Resistance	RDS(on)	VGS = 10V, ID = 300 mA	Refer to Datasheet Graph	Ω
Gate-Source Threshold Voltage	VGS(th)	VDS = VGS, ID = 250µA	1	V