| nhà sản xuất | tên linh kiện | bảng dữ liệu | Giải thích chi tiết về linh kiện |
 Vishay Siliconix |
VB20150S
|
167Kb/5P |
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.55 V at IF = 5 A
19-May-08 |
|
VB20150S-E3
|
152Kb/6P |
High Voltage Trench MOS Barrier Schottky Rectifier
13-Aug-13 |
|
VB20150S-E3
|
143Kb/5P |
High Voltage Trench MOS Barrier Schottky Rectifier
13-Aug-13 |
|
VB20150S-E3
|
217Kb/6P |
High Voltage Trench MOS Barrier Schottky Rectifier
18-Jun-2018 |
 Inchange Semiconductor ... |
VB20150S-E3
|
321Kb/2P |
Schotty Barrier Diode
|
 Vishay Siliconix |
VB20150S-E3/4W
|
167Kb/5P |
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.55 V at IF = 5 A
19-May-08 |
|
VB20150S-E3/4W
|
163Kb/5P |
High-Voltage Trench MOS Barrier Schottky Rectifier
24-Jun-09 |
|
VB20150S-E3/8W
|
167Kb/5P |
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.55 V at IF = 5 A
19-May-08 |
|
VB20150S-E3/8W
|
163Kb/5P |
High-Voltage Trench MOS Barrier Schottky Rectifier
24-Jun-09 |
|
VB20150S-M3
|
89Kb/4P |
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.55 V at IF = 5.0 A
30-Jun-14 |
 Inchange Semiconductor ... |
VB20150S-M3
|
321Kb/2P |
Schotty Barrier Diode
|
 Vishay Siliconix |
VB20150S-M3
|
78Kb/4P |
High-Voltage Trench MOS Barrier Schottky Rectifier
30-Jun-14 |
|
VB20150SG
|
167Kb/5P |
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.57 V at IF = 5 A
19-May-08 |
|
VB20150SG
|
158Kb/5P |
High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.57 V at IF = 5 A
13-Aug-13 |
|
VB20150SG
|
149Kb/5P |
High Voltage Trench MOS Barrier Schottky Rectifier
13-Aug-13 |
|
VB20150SG-E3
|
157Kb/6P |
High efficiency operation
13-Dec-16 |
|
VB20150SG-E3
|
217Kb/6P |
High Voltage Trench MOS Barrier Schottky Rectifier
18-Jun-2018 |
|
VB20150SG-E3/4W
|
167Kb/5P |
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.57 V at IF = 5 A
19-May-08 |
|
VB20150SG-E3/4W
|
163Kb/5P |
High-Voltage Trench MOS Barrier Schottky Rectifier
24-Jun-09 |
|
VB20150SG-E3/8W
|
167Kb/5P |
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.57 V at IF = 5 A
19-May-08 |