| nhà sản xuất | tên linh kiện | bảng dữ liệu | Giải thích chi tiết về linh kiện |
Vishay Siliconix |
VB20120C
|
285Kb/6P |
Dual High Voltage Trench MOS Barrier Schottky Rectifier
Revision: 23-Feb-2024 |
|
VB20120C-E3
|
285Kb/6P |
Dual High Voltage Trench MOS Barrier Schottky Rectifier
Revision: 23-Feb-2024 |
Inchange Semiconductor ... |
VB20120C-E3
|
315Kb/2P |
Schotty Barrier Diode
|
Vishay Siliconix |
VB20120C-E3/4W
|
163Kb/5P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
24-Jun-09 |
|
VB20120C-E3/4W
|
285Kb/6P |
Dual High Voltage Trench MOS Barrier Schottky Rectifier
Revision: 23-Feb-2024 |
|
VB20120C-E3/8W
|
163Kb/5P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
24-Jun-09 |
|
VB20120C-E3/8W
|
285Kb/6P |
Dual High Voltage Trench MOS Barrier Schottky Rectifier
Revision: 23-Feb-2024 |
|
VB20120C-M3
|
89Kb/4P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A
14-May-13 |
|
VB20120C-M3
|
103Kb/4P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A
19-Jun-2018 |
Inchange Semiconductor ... |
VB20120C-M3
|
315Kb/2P |
Schotty Barrier Diode
|
Vishay Siliconix |
VB20120C-M3
|
79Kb/4P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
14-May-13 |
|
VB20120C-M3
|
103Kb/4P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A
19-Jun-2018 |
Vietnamese ▼ 
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Indian
Mexican
British
New Zealand