| nhà sản xuất | tên linh kiện | bảng dữ liệu | Giải thích chi tiết về linh kiện |
STMicroelectronics |
STS11NF30L
|
45Kb/6P |
N-CHANNEL 30V - 0.009 ohm - 11A SO-8 LOW GATE CHARGE STripFET POWER MOSFET
Apr-2000 |
|
STS11NF30L
|
332Kb/12P |
N-channel 30V - 0.0085Ω - 11A SO-8 Low gate charge STripFET??II Power MOSFET
12-Jan-2007 |
SHENZHEN DOINGTER SEMIC... |
STS11NF30L
|
1Mb/4P |
N-Channel MOSFET uses advanced trench technology
|
VBsemi Electronics Co.,... |
STS11NF30L
|
928Kb/9P |
N-Channel 20V (D-S) MOSFET
|
STMicroelectronics |
STS11NF30L
|
332Kb/12P |
N-channel 30V - 0.0085Ω - 11A SO-8 Low gate charge STripFET??II Power MOSFET
12-Jan-2007 |
|
STS11N3LLH5
|
732Kb/12P |
N-channel 30 V, 0.0117 Ω, 11 A, SO-8 STripFET™ V Power MOSFET
June 2011 Rev 2 |
VBsemi Electronics Co.,... |
STS11N3LLH5
|
929Kb/9P |
N-Channel 20V (D-S) MOSFET
|
Solid State Optronic |
STS100
|
130Kb/4P |
Multifunction Telecommunications Switch
|
Solid State Inc |
STS100
|
596Kb/7P |
Telecom switching
|
JILIN SINO-MICROELECTRO... |
STS10100S
|
409Kb/6P |
TRENCH SCHOTTKY BARRIER DIODE
201807B |
|
STS10100S-RM-A
|
409Kb/6P |
TRENCH SCHOTTKY BARRIER DIODE
201807B |
|
STS10100S-RM-A
|
1Mb/9P |
TRENCH SCHOTTKY BARRIER DIODE
202211D |
|
STS10100S-RM-AR
|
409Kb/6P |
TRENCH SCHOTTKY BARRIER DIODE
201807B |
|
STS10100S-RM-AR
|
1Mb/9P |
TRENCH SCHOTTKY BARRIER DIODE
202211D |
|
STS10100S-XG-A
|
409Kb/6P |
TRENCH SCHOTTKY BARRIER DIODE
201807B |
|
STS10100S-XG-AR
|
409Kb/6P |
TRENCH SCHOTTKY BARRIER DIODE
201807B |
STMicroelectronics |
STS10DN3LH5
|
773Kb/13P |
Very low switching gate charge
May 2009 Rev 1 |
|
STS10N3LH5
|
778Kb/13P |
N-channel 30 V, 0.019 Ω, 10 A, SO-8 STripFET™V Power MOSFET
06-May-2009 |
VBsemi Electronics Co.,... |
STS10N3LH5
|
1,006Kb/9P |
N-Channel 20V (D-S) MOSFET
|
STMicroelectronics |
STS10NF30L
|
44Kb/6P |
N - CHANNEL 30V - 0.011ohm - 10A SO-8 STripFET POWER MOSFET
Jun-2000 |
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