| nhà sản xuất | tên linh kiện | bảng dữ liệu | Giải thích chi tiết về linh kiện |
Power Integrations, Inc... |
SIC1182KQ
|
1Mb/18P |
Up to 8 A Single Channel SiC MOSFET and IGBT Gate
December 2022 |
|
SIC1182KQ
|
1Mb/18P |
Up to 8 A Single Channel SiC MOSFET and IGBT Gate
December 2022 |
|
SIC1181KQ
|
1Mb/18P |
Up to 8 A Single Channel SiC MOSFET and IGBT Gate
December 2022 |
|
SIC1181KQ
|
1Mb/18P |
Up to 8 A Single Channel SiC MOSFET and IGBT Gate
December 2022 |
|
SIC118XKQ
|
1Mb/18P |
Up to 8 A Single Channel SiC MOSFET and IGBT Gate
December 2022 |
Inchange Semiconductor ... |
SIC1065CT
|
299Kb/2P |
SiC Schottky Rectifier Didoe
|
Pan Jit International I... |
SIC10A065D
|
434Kb/5P |
SILICON CARBIDE SCHOTTKY DIODE
|
|
SIC10A065ND
|
497Kb/5P |
SILICON CARBIDE SCHOTTKY DIODE
|
|
SIC10A065ND_R2_00001
|
497Kb/5P |
SILICON CARBIDE SCHOTTKY DIODE
|
|
SIC10A065T
|
468Kb/5P |
SILICON CARBIDE SCHOTTKY DIODE
|
|
SIC10A065T-AU
|
469Kb/5P |
SILICON CARBIDE SCHOTTKY DIODE
|
|
SIC10A065T-AU_T0_000A1
|
469Kb/5P |
SILICON CARBIDE SCHOTTKY DIODE
|
|
SIC10A065T_T0_00001
|
468Kb/5P |
SILICON CARBIDE SCHOTTKY DIODE
|
|
SIC10A120T
|
472Kb/5P |
SILICON CARBIDE SCHOTTKY DIODE
|
Chip Integration Techno... |
SIC10C60
|
816Kb/4P |
10A SiC Schottky Diode
|
|
SIC12C60
|
809Kb/4P |
12A SiC Schottky Diode
|
Coherent Corp |
SIC-EPITAXY-WAFERS
|
936Kb/2P |
SiC EPITAXIAL WAFERS
|
Roithner LaserTechnik G... |
SIC01D-A18
|
617Kb/4P |
UVA SIC photodiode
|
|
SIC01D-B18
|
713Kb/3P |
uvb sic photodiode according to dvgw w294
|
|
SIC01L-18
|
676Kb/3P |
ptb tested high chip stability
|
Vietnamese ▼ 
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Indian
Mexican
British
New Zealand