| nhà sản xuất | tên linh kiện | bảng dữ liệu | Giải thích chi tiết về linh kiện |
Renesas Technology Corp |
RJK6002DPD
|
74Kb/4P |
Silicon N Channel MOS FET High Speed Power Switching
|
VBsemi Electronics Co.,... |
RJK6002DPD
|
1Mb/9P |
N-Channel 650 V (D-S) MOSFET
|
SHENZHEN DOINGTER SEMIC... |
RJK6002DPD
|
1Mb/5P |
N-Channel MOSFET uses advanced trench technology
|
Inchange Semiconductor ... |
RJK6002DPD
|
276Kb/2P |
isc N-Channel MOSFET Transistor
|
Renesas Technology Corp |
RJK6002DPD-00-J2
|
74Kb/4P |
Silicon N Channel MOS FET High Speed Power Switching
|
|
RJK6002DPD
|
113Kb/9P |
Silicon N Channel MOS FET High Speed Power Switching
|
|
RJK6002DPE-00J3
|
82Kb/7P |
600V - 2A - MOS FET High Speed Power Switching
|
Inchange Semiconductor ... |
RJK6002DPH
|
286Kb/2P |
isc N-Channel MOSFET Transistor
|
Renesas Technology Corp |
RJK6002DPH-E0
|
99Kb/7P |
600V - 2A - MOS FET High Speed Power Switching
|
|
RJK6002DPH-E0T2
|
99Kb/7P |
600V - 2A - MOS FET High Speed Power Switching
|
|
RJK6002DPH-E0
|
99Kb/7P |
600V - 2A - MOS FET High Speed Power Switching
|
|
RJK6002DJE
|
69Kb/4P |
600V - 2A - MOS FET High Speed Power Switching
|
|
RJK6002DJE-00Z0
|
69Kb/4P |
600V - 2A - MOS FET High Speed Power Switching
|
|
RJK6002DJE
|
69Kb/4P |
600V - 2A - MOS FET High Speed Power Switching
|
|
RJK6006DPD
|
80Kb/7P |
Silicon N Channel MOS FET High Speed Power Switching
|
|
RJK6006DPD
|
80Kb/7P |
Silicon N Channel MOS FET High Speed Power Switching
|
SHENZHEN DOINGTER SEMIC... |
RJK6006DPD
|
1Mb/5P |
N-Channel MOSFET uses advanced trench technology
|
Inchange Semiconductor ... |
RJK6006DPD
|
276Kb/2P |
isc N-Channel MOSFET Transistor
|
Renesas Technology Corp |
RJK6006DPD-00-J2
|
80Kb/7P |
Silicon N Channel MOS FET High Speed Power Switching
|
|
RJK6006DPD
|
80Kb/7P |
Silicon N Channel MOS FET High Speed Power Switching
|
Vietnamese ▼ 
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Indian
Mexican
British
New Zealand