| nhà sản xuất | tên linh kiện | bảng dữ liệu | Giải thích chi tiết về linh kiện |
International Rectifier |
IRF7606PBF
|
189Kb/7P |
Generation V Technology
|
|
IRF7601
|
116Kb/8P |
Power MOSFET(Vdss=20V, Rds(on)=0.035ohm)
|
|
IRF7601PBF
|
214Kb/8P |
Generation V Technology
|
|
IRF7601PBF
|
214Kb/8P |
ULTRA LOW ON RESISTANCE
|
|
IRF7601PBF
|
214Kb/8P |
ULTRA LOW ON RESISTANCE
|
|
IRF7601TR
|
119Kb/8P |
Generation V Technology
|
|
IRF7603
|
113Kb/8P |
Power MOSFET(Vdss=30V, Rds(on)=0.035ohm)
|
|
IRF7603PBF
|
1Mb/8P |
HEXFET Power MOSFET
|
|
IRF7604
|
134Kb/8P |
Power MOSFET(Vdss=-20V, Rds(on)=0.09ohm)
|
|
IRF7604PBF
|
508Kb/8P |
HEXFET POWER MOSFET ( VDSS = -20V , RDS(on) = 0.09廓 )
|
|
IRF7606
|
102Kb/8P |
Power MOSFET(Vdss=-30V, Rds(on)=0.09ohm)
|
|
IRF7607
|
77Kb/8P |
Power MOSFET(Vdss=20V, Rds(on)=0.030ohm)
|
|
IRF7607PBF
|
144Kb/8P |
HEXFET Power MOSFET
|
|
IRF7607PBF
|
149Kb/8P |
Ultra Low On-Resistance
|
|
IRF7607PBF
|
149Kb/8P |
Ultra Low On-Resistance
|
|
IRF7607TRPBF
|
149Kb/8P |
Trench Technology
|
|
IRF7663
|
77Kb/7P |
Power MOSFET(Vdss=-20V, Rds(on)=0.020ohm)
|
|
IRF7663PBF
|
151Kb/7P |
Trench Technology, Ultra Low On-Resistance, P-Channel MOSFET
|
|
IRF7663TR
|
82Kb/7P |
Trench Technology
|
|
IRF7665S2PBF
|
253Kb/9P |
Key parameters optimized for Class-D audio amplifier applications
|
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