| nhà sản xuất | tên linh kiện | bảng dữ liệu | Giải thích chi tiết về linh kiện |
NXP Semiconductors |
A2G22S160-01S
|
815Kb/18P |
RF Power GaN Transistor
Rev. 0, 5/2015 |
|
A2G22S160-01S
|
761Kb/18P |
1800–2200 MHz, 32 W AVG., 48 V AIRFAST RF POWER GaN TRANSISTOR
Rev. 1, 01/2022 |
|
A2G22S160-01SR3
|
815Kb/18P |
RF Power GaN Transistor
Rev. 0, 5/2015 |
|
A2G22S160-01SR3
|
761Kb/18P |
1800–2200 MHz, 32 W AVG., 48 V AIRFAST RF POWER GaN TRANSISTOR
Rev. 1, 01/2022 |
|
A2G22S190-01S
|
188Kb/9P |
RF Power GaN Transistor
|
|
A2G22S190-01SR3
|
188Kb/9P |
RF Power GaN Transistor
|
|
A2G22S251-01S
|
297Kb/13P |
RF Power GaN Transistor
Rev. 0, 5/2016 |
|
A2G22S251-01SR3
|
297Kb/13P |
RF Power GaN Transistor
Rev. 0, 5/2016 |
|
A2G26H281-04S
|
270Kb/10P |
RF Power GaN Transistor
Rev. 1, 02/2017 |
|
A2G26H281-04SR3
|
270Kb/10P |
RF Power GaN Transistor
Rev. 1, 02/2017 |
|
A2G35S160-01S
|
325Kb/10P |
RF Power GaN Transistor
Rev. 0, 5/2016 |
|
A2G35S160-01SR3
|
325Kb/10P |
RF Power GaN Transistor
Rev. 0, 5/2016 |
|
A2G35S200-01S
|
344Kb/10P |
RF Power GaN Transistor
Rev. 0, 5/2016 |
|
A2G35S200-01SR3
|
344Kb/10P |
RF Power GaN Transistor
Rev. 0, 5/2016 |
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