| nhà sản xuất | tên linh kiện | bảng dữ liệu | Giải thích chi tiết về linh kiện |
 Unisonic Technologies |
MMBT3906L-AE3-R
|
50Kb/3P |
GENERAL PURPOSE APPLIATION
|
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MMBT3906L-AE3-R
|
140Kb/3P |
GENERAL PURPOSE APPLIATION
|
|
MMBTA06L-AE3-R
|
115Kb/5P |
AMPLIFIER TRANSISTOR
|
|
MMBTA06L-AE3-R
|
217Kb/5P |
AMPLIFIER TRANSISTOR
|
|
MMBTA56L-AE3-R
|
116Kb/5P |
AMPLIFIER TRANSISTOR PNP SILICON TRANSISTOR
|
|
MMBTA56L-AE3-R
|
227Kb/5P |
AMPLIFIER TRANSISTOR
|
|
SK1816L-AE3-R
|
289Kb/8P |
BIPOLAR LATCH TYPE HALL EFFECT FOR HIGH-TEMPERATURE OPERATION
|
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SK1816L-AE3-R
|
239Kb/6P |
BIPOLAR LATCH TYPE HALL EFFECT FOR HIGH-TEMPERATURE OPERATION
|
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SK1826L-AE3-R
|
193Kb/5P |
BIPOLAR LATCH TYPE HALL EFFECT FOR HIGH-TEMPERATURE OPERATION
|
|
UT2306L-AE3-R
|
258Kb/5P |
N-CHANNEL ENHANCEMENT MODE
|
|
UT2306L-AE3-R
|
242Kb/5P |
N-CHANNEL ENHANCEMENT MODE
|
 VBsemi Electronics Co.,... |
UT2306L-AE3-R
|
492Kb/9P |
N-Channel 30-V (D-S) MOSFET
|
 Unisonic Technologies |
UT2316L-AE3-R
|
140Kb/4P |
N-CHANNEL ENHANCEMENT MODE
|
|
UT2316L-AE3-R
|
204Kb/4P |
N-CHANNEL ENHANCEMENT MODE
|
 VBsemi Electronics Co.,... |
UT2316L-AE3-R
|
492Kb/9P |
N-Channel 30-V (D-S) MOSFET
|
|
UT3406L-AE3-R
|
492Kb/9P |
N-Channel 30-V (D-S) MOSFET
|
 Unisonic Technologies |
UT3416L-AE3-R
|
114Kb/3P |
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
|
 VBsemi Electronics Co.,... |
UT3416L-AE3-R
|
482Kb/9P |
N-Channel 30-V (D-S) MOSFET
|
 Unisonic Technologies |
UT3N06L-AE3-R
|
163Kb/3P |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
|
 VBsemi Electronics Co.,... |
UT3N06L-AE3-R
|
509Kb/9P |
N-Channel 60-V (D-S) MOSFET
|