| nhà sản xuất | tên linh kiện | bảng dữ liệu | Giải thích chi tiết về linh kiện |
Emerson Network Power |
VS4/9
|
346Kb/8P
|
VS Series
|
Faraday Technology |
VS400M
|
39Kb/2P
|
SERIAL DIGITAL VIDEO PASSIVE SIGNAL SPLITTER
|
SHENZHEN DOINGTER SEMIC... |
VS40120AD
|
1Mb/6P
|
N-Channel MOSFET uses advanced SGT technology
|
Vectron International, ... |
VS402
|
569Kb/6P
|
Dual Frequency VCSO
|
SHENZHEN DOINGTER SEMIC... |
VS40200AD
|
2Mb/6P
|
N-Channel MOSFET uses advanced SGT technology
|
|
VS40280AT
|
2Mb/6P
|
N-Channel MOSFET uses advanced trench technology
|
|
VS4080AD
|
2Mb/5P
|
N-Channel MOSFET uses advanced trench technology
|
|
VS40N10AT
|
942Kb/3P
|
N-Channel MOSFET uses advanced trench technology
|
Rohm |
VS40VUA1VWM
|
1Mb/10P
|
Transient Voltage Suppressor
2022/02/08_Rev.001
|
|
VS40VUA1VWMTF
|
2Mb/10P
|
Transient Voltage Suppressor
2022/02/08_Rev.001
|
SHENZHEN DOINGTER SEMIC... |
VS4310AT
|
1Mb/5P
|
N-Channel MOSFET uses advanced trench technology
|
Rohm |
VS43VLNVWM
|
1Mb/10P
|
Transient Voltage Suppressor
2022/02/08_Rev.001
|
|
VS43VLNVWMTF
|
2Mb/10P
|
Transient Voltage Suppressor
2022/02/08_Rev.001
|
SHENZHEN DOINGTER SEMIC... |
VS4407AS
|
1Mb/5P
|
P-Channel MOSFET uses advanced trench technology
|
|
VS4407BS
|
1Mb/4P
|
P-Channel MOSFET uses advanced trench technology
|
|
VS4449AS
|
1Mb/4P
|
P-Channel MOSFET uses advanced trench technology
|
New Jersey Semi-Conduct... |
VS448X
|
181Kb/2P
|
2 Amp Fast Recovery Time Epoxy Bridge Rectifiers
|
VBsemi Electronics Co.,... |
VS4518AH
|
457Kb/9P
|
P-Channel 30-V (D-S) MOSFET
|
SHENZHEN DOINGTER SEMIC... |
VS4518AS
|
1Mb/4P
|
P-Channel MOSFET uses advanced trench technology
|
|
VS4559MS
|
3Mb/7P
|
N-Chanel and P-Channel MOSFET use advanced trench technology
|
Vietnamese ▼ 
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Indian
Mexican
British
New Zealand
