| nhà sản xuất | tên linh kiện | bảng dữ liệu | Giải thích chi tiết về linh kiện |
 Vishay Siliconix |
SIA533EDJ
|
278Kb/14P
|
N- and P-Channel 12-V (D-S) MOSFET
25-Jan-10
|
 Vishay Telefunken |
SIA533EDJ
|
342Kb/14P
|
N- and P-Channel 12-V (D-S) MOSFET
|
 Vishay Siliconix |
SIA533EDJ
|
405Kb/14P
|
N- and P-Channel 12 V (D-S) MOSFET
25-Jan-10
|
|
SIA533EDJ-T1-GE3
|
278Kb/14P
|
N- and P-Channel 12-V (D-S) MOSFET
25-Jan-10
|
|
SIA533EDJ-T1-GE3
|
405Kb/14P
|
N- and P-Channel 12 V (D-S) MOSFET
25-Jan-10
|
|
SIA533EDJ
|
405Kb/14P
|
N- and P-Channel 12 V (D-S) MOSFET
25-Jan-10
|
| Search Partnumber :
Start with "SIA533EDJ" -
Total : 118 ( 1/6 Page) |
 Vishay Siliconix |
SIA533EDJ-T1-GE3
|
278Kb/14P |
N- and P-Channel 12-V (D-S) MOSFET
25-Jan-10 |
|
SIA533EDJ-T1-GE3
|
405Kb/14P |
N- and P-Channel 12 V (D-S) MOSFET
25-Jan-10 |
|
SIA533EDJ
|
405Kb/14P |
N- and P-Channel 12 V (D-S) MOSFET
25-Jan-10 |
 Vishay Telefunken |
SIA537EDJ
|
398Kb/14P |
N-Channel 12 V (D-S) and P-Channel 20 V (D-S) MOSFET
|
 Vishay Siliconix |
SIA537EDJ
|
401Kb/14P |
N-Channel 12 V (D-S) and P-Channel 20 V (D-S) MOSFET
30-Dec-13 |
 SHENZHEN DOINGTER SEMIC... |
SIA537EDJ
|
1Mb/7P |
N-Channel and P-Channel MOSFET uses advanced trench technology To provide excellent RDS(ON)
|
 Vishay Siliconix |
SIA537EDJ
|
401Kb/14P |
N-Channel 12 V (D-S) and P-Channel 20 V (D-S) MOSFET
30-Dec-13 |
|
SIA537EDJ-T1-GE3
|
401Kb/14P |
N-Channel 12 V (D-S) and P-Channel 20 V (D-S) MOSFET
30-Dec-13 |
|
SIA537EDJ
|
401Kb/14P |
N-Channel 12 V (D-S) and P-Channel 20 V (D-S) MOSFET
30-Dec-13 |
|
SIA511DJ
|
321Kb/6P |
N- and P-Channel 12-V (D-S) MOSFET
19-Nov-07 |
|
SIA513DJ
|
301Kb/14P |
N- and P-Channel 20-V (D-S) MOSFET
03-Mar-08 |
|
SIA513DJ
|
300Kb/14P |
N- and P-Channel 20-V (D-S) MOSFET
03-Mar-08 |
|
SIA513DJ
|
300Kb/14P |
N- and P-Channel 20-V (D-S) MOSFET
03-Mar-08 |
 Shenzhen Tuofeng Semico... |
SIA517
|
3Mb/10P |
N- and P-Channel 12-V (D-S) MOSFET
Feb,2018 V1.0 |