Tóm lược   PXAC241002FC-V1-R2(1) kết quả tìm kiếm. Nhất quán, giống nhau  PXAC241002FC-V1-R2(1) Bắt đầu với   No Data Kết thúc   No Data Bao gồm   No Data nhà sản xuất

nhà sản xuất tên linh kiện bảng dữ liệu Giải thích chi tiết về linh kiện Cree, Inc PXAC241002FC-V1-R2 279Kb/8P Thermally-Enhanced High Power RF LDMOS FET 100 W, 28 V, 2300 ??2400 MHz Search Partnumber : Start with "PXAC241002FC-V1-R2" - Total : 59 ( 1/3 Page) Cree, Inc PXAC241002FC-V1-R0 279Kb/8P Thermally-Enhanced High Power RF LDMOS FET 100 W, 28 V, 2300 ??2400 MHz PXAC241002FCV1R0 279Kb/8P Thermally-Enhanced High Power RF LDMOS FET 100 W, 28 V, 2300 ??2400 MHz PXAC241002FCV1R2 279Kb/8P Thermally-Enhanced High Power RF LDMOS FET 100 W, 28 V, 2300 ??2400 MHz PXAC241002FC 279Kb/8P Thermally-Enhanced High Power RF LDMOS FET 100 W, 28 V, 2300 ??2400 MHz Infineon Technologies A... PXAC241702FC 1Mb/10P Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 2300 ??2400 MHz Rev. 02.1, 2016-06-22 Cree, Inc PXAC241702FC 577Kb/10P Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 2300 ??2400 MHz Infineon Technologies A... PXAC241702FCV1R0 1Mb/10P Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 2300 ??2400 MHz Rev. 02.1, 2016-06-22 PXAC241702FCV1R0XTMA1 1Mb/10P Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 2300 ??2400 MHz Rev. 02.1, 2016-06-22 PXAC241702FCV1R250 1Mb/10P Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 2300 ??2400 MHz Rev. 02.1, 2016-06-22 PXAC241702FCV1R250XTMA1 1Mb/10P Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 2300 ??2400 MHz Rev. 02.1, 2016-06-22 Cree, Inc PXAC243502FV 543Kb/10P High Power RF LDMOS Field Effect Transistor 350 W, 28 V, 2300 ??2400 MHz Infineon Technologies A... PXAC243502FV 1Mb/10P High Power RF LDMOS Field Effect Transistor Rev. 03.1, 2015-04-13 PXAC243502FVV1R0 1Mb/10P High Power RF LDMOS Field Effect Transistor 350 W, 28 V, 2300 ??2400 MHz Rev. 03.2, 2016-06-22 PXAC243502FVV1R0XTMA1 1Mb/10P High Power RF LDMOS Field Effect Transistor 350 W, 28 V, 2300 ??2400 MHz Rev. 03.2, 2016-06-22 PXAC243502FVV1R250 1Mb/10P High Power RF LDMOS Field Effect Transistor 350 W, 28 V, 2300 ??2400 MHz Rev. 03.2, 2016-06-22 PXAC243502FVV1R250XTMA1 1Mb/10P High Power RF LDMOS Field Effect Transistor 350 W, 28 V, 2300 ??2400 MHz Rev. 03.2, 2016-06-22 PXAC243502FV 1Mb/10P High Power RF LDMOS Field Effect Transistor Rev. 03.1, 2015-04-13 PXAC243502FV 1Mb/10P High Power RF LDMOS Field Effect Transistor 350 W, 28 V, 2300 ??2400 MHz Rev. 03.2, 2016-06-22 PXAC200902FC 489Kb/10P Thermally-Enhanced High Power RF LDMOS FET 90 W, 28 V, 1805 ??2170 MHz Rev. 02.1, 2016-02-11

PXAC241002FC-V1-R2 bảng dữ liệu, PDF [nhà phân phối]

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