Tóm lược   PXAC210552FC-V1-R0(1) kết quả tìm kiếm. Nhất quán, giống nhau  PXAC210552FC-V1-R0(1) Bắt đầu với   No Data Kết thúc   No Data Bao gồm   No Data nhà sản xuất

nhà sản xuất tên linh kiện bảng dữ liệu Giải thích chi tiết về linh kiện WOLFSPEED, INC. PXAC210552FC-V1-R0 702Kb/10P Thermally-Enhanced High Power RF LDMOS FET 55 W, 28 V, 1805 – 2170 MHz Rev. 05, 2023-06-28 Search Partnumber : Start with "PXAC210552FC-V1-R0" - Total : 59 ( 1/3 Page) WOLFSPEED, INC. PXAC210552FC-V1-R2 702Kb/10P Thermally-Enhanced High Power RF LDMOS FET 55 W, 28 V, 1805 – 2170 MHz Rev. 05, 2023-06-28 Infineon Technologies A... PXAC210552FC 206Kb/10P Thermally-Enhanced High Power RF LDMOS FET 55 W, 28 V, 1805 ??2170 MHz Rev. 02, 2015-12-04 Cree, Inc PXAC210552FC 600Kb/10P Thermally-Enhanced High Power RF LDMOS FET 55 W, 28 V, 1805 ??2170 MHz WOLFSPEED, INC. PXAC210552FC 702Kb/10P Thermally-Enhanced High Power RF LDMOS FET 55 W, 28 V, 1805 – 2170 MHz Rev. 05, 2023-06-28 Infineon Technologies A... PXAC210552MD 466Kb/10P Thermally-Enhanced High Power RF LDMOS FET 55 W, 28 V, 1805 ??2170 MHz Rev. 03.1, 2017-01-25 PXAC210552ND 466Kb/9P Thermally-Enhanced High Power RF LDMOS FET 55 W, 28 V, 1805 ??2170 MHz Rev. 04.1, 2017-01-09 PXAC213308FV 1Mb/8P Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 2110 ??2200 MHz Rev. 02, 2016-05-04 Cree, Inc PXAC213308FV 518Kb/8P Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 2110 ??2200 MHz Infineon Technologies A... PXAC200902FC 489Kb/10P Thermally-Enhanced High Power RF LDMOS FET 90 W, 28 V, 1805 ??2170 MHz Rev. 02.1, 2016-02-11 Cree, Inc PXAC200902FC 600Kb/10P Thermally-Enhanced High Power RF LDMOS FET 90 W, 28 V, 1805 - 2170 MHz Infineon Technologies A... PXAC201202FC 1Mb/10P Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 1800 ??2200 MHz Rev. 05.1, 2016-06-22 Cree, Inc PXAC201202FC 590Kb/10P Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 1800 - 2200 MHz Infineon Technologies A... PXAC201202FCV2R0 1Mb/10P Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 1800 ??2200 MHz Rev. 05.1, 2016-06-22 PXAC201202FCV2R0XTMA1 1Mb/10P Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 1800 ??2200 MHz Rev. 05.1, 2016-06-22 PXAC201202FCV2R250 1Mb/10P Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 1800 ??2200 MHz Rev. 05.1, 2016-06-22 PXAC201202FCV2R250XTMA1 1Mb/10P Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 1800 ??2200 MHz Rev. 05.1, 2016-06-22 PXAC201602FC 402Kb/9P Thermally-Enhanced High Power RF LDMOS FET 140 W, 28 V, 1880 ??1920 MHz, 2010 ??2025 MHz Rev. 04.1, 2016-07-19 Cree, Inc PXAC201602FC 529Kb/9P Thermally-Enhanced High Power RF LDMOS FET 140 W, 28 V, 1880 - 1920 MHz, 2010 - 2025 MHz Infineon Technologies A... PXAC201602FCV1R0 402Kb/9P Thermally-Enhanced High Power RF LDMOS FET 140 W, 28 V, 1880 ??1920 MHz, 2010 ??2025 MHz Rev. 04.1, 2016-07-19

PXAC210552FC-V1-R0 bảng dữ liệu, PDF [nhà phân phối]

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