| nhà sản xuất | tên linh kiện | bảng dữ liệu | Giải thích chi tiết về linh kiện |
 Unisonic Technologies |
BAV199L-AE3-R
|
119Kb/2P
|
DUAL SURFACE MOUNT LOW LEAKAGE DIODE
|
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BAV99L-AE3-R
|
98Kb/4P
|
HIGH CONDUCTANCE ULTRA FAST DIODE
|
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BAV99L-AE3-R
|
187Kb/4P
|
HIGH CONDUCTANCE ULTRA FAST DIODE
|
|
SK8509L-AE3-R
|
247Kb/6P
|
HALL-EFFECT SENSOR IC
|
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SK8509L-AE3-R
|
272Kb/6P
|
HALL-EFFECT SENSOR IC
|
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SK8509L-AE3-R
|
231Kb/6P
|
HALL-EFFECT SENSOR IC
|
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UT2309L-AE3-R
|
224Kb/4P
|
P-CHANNEL ENHANCEMENT MODE
|
 VBsemi Electronics Co.,... |
UT2309L-AE3-R
|
502Kb/9P
|
P-Channel 30 V (D-S) MOSFET
|
 Unisonic Technologies |
UT3409L-AE3-R
|
202Kb/4P
|
P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
|
 VBsemi Electronics Co.,... |
UT3409L-AE3-R
|
472Kb/9P
|
P-Channel 20-V (D-S) MOSFET
|
 Unisonic Technologies |
UT3419L-AE3-R
|
145Kb/3P
|
20V, 3.5A P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
|
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ZD3.9L-AE3-R
|
117Kb/3P
|
ZENER DIODE
|