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Silan Microelectronics ... |
2CW032030JL-R
|
96Kb/2P
|
2CW032XXXJL-R SERIES ZENER DIODE CHIPS FOR PLASTIC PACKAGE WITH ASYMMETRY LIMITS
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|
2CW032130JL-R
|
96Kb/2P
|
2CW032XXXJL-R SERIES ZENER DIODE CHIPS FOR PLASTIC PACKAGE WITH ASYMMETRY LIMITS
|
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2CW032330JL-R
|
96Kb/2P
|
2CW032XXXJL-R SERIES ZENER DIODE CHIPS FOR PLASTIC PACKAGE WITH ASYMMETRY LIMITS
|
| Search Partnumber :
Start with "30JL-R" -
Total : 31 ( 1/2 Page) |
Toshiba Semiconductor |
30JL2C41
|
290Kb/4P |
SWITCHING MODE POWER SUPPLY APPLICATON
|
|
30JL2C41
|
155Kb/2P |
SILICON EPITAXIAL TYPE (SWITCHING TYPE POWER SUPPLY CONVERTER & CHOPPER APPLICATIONS)
|
|
30JL2C41
|
290Kb/4P |
SWITCHING MODE POWER SUPPLY APPLICATON
|
Vishay Siliconix |
30JLA000
|
133Kb/7P |
Axial Vitreous Leaded Wirewound Resistors
28-Mar-17 |
Ohmite Mfg. Co. |
30J100
|
236Kb/3P |
High Energy Wirewound
|
Toshiba Semiconductor |
30J101
|
193Kb/6P |
Silicon N Channel IGBT High Power Switching Applications
|
|
30J121
|
294Kb/6P |
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
|
|
30J122
|
498Kb/6P |
4TH GENERATION IGBT CURRENT RESONANCE INVERTER SWITCHING
01-Nov-2006 |
|
30J122A
|
199Kb/7P |
Dedicated to Current-Resonant Inverter Switching Applications Dedicated to Partial-Switching Power Factor rrection (PFC) Applications
|
|
30J124
|
1Mb/73P |
Bipolar Small-Signal Transistors
|
|
30J126
|
1Mb/73P |
Bipolar Small-Signal Transistors
|
AG Electronica |
30J127
|
226Kb/2P |
MOSFET 600V 200A IGBT
|
Ohmite Mfg. Co. |
30J150
|
236Kb/3P |
High Energy Wirewound
|
|
30J15R
|
236Kb/3P |
High Energy Wirewound
|
|
30J27R
|
236Kb/3P |
High Energy Wirewound
|
Vishay Siliconix |
30J2C000
|
133Kb/7P |
Axial Vitreous Leaded Wirewound Resistors
28-Mar-17 |
Ohmite Mfg. Co. |
30J2R0
|
236Kb/3P |
High Energy Wirewound
|
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