BSH3-1-R nhà sản xuất, Function, bảng dữ liệu

nhà sản xuất	tên linh kiện	bảng dữ liệu Date Size	Giải thích chi tiết về linh kiện	Rohs Pb Free Lifecycle	Trang chủ
NXP Semiconductors	BSH103 T/R		N-channel enhancement mode MOS transistor - Configuration: Single N-channel ; I_D DC: 0.85 A; Q_gd (typ): 0.67 nC; R_DS(on): 400@4.5V500@2.5V mOhm; V_DSmax: 30 V	compliant no active
	BSH105 T/R		N-channel enhancement mode MOS transistor - Configuration: Single N-channel ; I_D DC: 1.05 A; Q_gd (typ): 1.4 nC; R_DS(on): 200@4.5V250@2.5V mOhm; V_DSmax: 20 V	compliant no active
	BSH111BK/S500R		BSH111BK	transferred
	BSH111BKR		BSH111BK - 55 V, N-channel Trench MOSFET TO-236 3-Pin	transferred
	BSH121,115		N-channel TrenchMOS extremely low level FET SC-70 3-Pin	active
Nexperia	BSH121,115		N-channel TrenchMOS extremely low level FET@en-us SC-70 3-Pin	obsolete
NXP Semiconductors	BSH201 T/R		P-channel enhancement mode MOS transistor - Configuration: Single P-channel ; I_D DC: 0.3 A; Q_gd (typ): 0.4 nC; R_DS(on): 2500@10V3750@4.5V mOhm; V_DSmax: 60 V	compliant no active
NXP Semiconductors	BSH201,235		BSH201 - P-channel vertical D-MOS logic level FET TO-236 3-Pin	active
Nexperia	BSH201,235		BSH201 - P-channel vertical D-MOS logic level FET@en-us TO-236 3-Pin	active
NXP Semiconductors	BSH202 T/R		P-channel enhancement mode MOS transistor - Configuration: Single P-channel ; I_D DC: 0.52 A; Q_gd (typ): 0.5 nC; R_DS(on): 900@10V1350@4.5V mOhm; V_DSmax: 30 V	compliant no active
Nexperia	BSH202,235		BSH202 - P-channel vertical D-MOS logic level FET@en-us TO-236 3-Pin	active
NXP Semiconductors	BSH203 T/R		P-channel enhancement mode MOS transistor - Configuration: Single P-channel ; I_D DC: 0.47 A; Q_gd (typ): 0.25 nC; R_DS(on): 900@4.5V1100@2.5V mOhm; V_DSmax: 30 V	compliant no active
Nexperia	BSH203,235		BSH203; BSH205 - P-channel vertical D-MOS logic level FET@en-us TO-236 3-Pin	active
NXP Semiconductors	BSH205 T/R		P-channel enhancement mode MOS transistor - Configuration: Single P-channel ; I_D DC: 0.75 A; Q_gd (typ): 1 nC; R_DS(on): 400@4.5V500@2.5V mOhm; V_DSmax: 12 V	compliant no active
NXP Semiconductors	BSH205,235		P-channel vertical D-MOS logic level FET TO-236 3-Pin	active
Nexperia	BSH205,235		BSH203; BSH205 - P-channel vertical D-MOS logic level FET@en-us TO-236 3-Pin	obsolete
NXP Semiconductors	BSH205G2VL		BSH205G2 - 20 V, P-channel Trench MOSFET TO-236 3-Pin	transferred
NXP Semiconductors	BSH207 /T3		P-channel enhancement mode MOS transistor - Configuration: Single P-channel ; I_D DC: 1.52 A; Q_gd (typ): 2 nC; R_DS(on): 120@4.5V150@2.5V mOhm; V_DSmax: 12 V	compliant no active

BSH3-1-R nhà sản xuất

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