2SC5480 datasheet(2/6 Pages) HITACHI

tên linh kiện	2SC5480

Giải thích chi tiết về linh kiện	Silicon NPN Triple Diffused Horizntal Deflection Output

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nhà sản xuất	HITACHI [Hitachi Semiconductor]

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2SC5480

Absolute Maximum Ratings (Ta = 25

°C)

Item

Symbol

Ratings

Unit

Collector to emitter voltage

CES

1500

Emitter to base voltage

EBO

Collector current

Collector peak current

c(peak)

Collector power dissipation

Note1

Junction temperature

150

°C

Storage temperature

Tstg

–55 to +150

°C

Collector to emitter diode forward current

Note:

1. Value at Tc = 25

°C

Electrical Characteristics (Ta = 25

°C)

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

Emitter to base breakdown

voltage

(BR)EBO

——V

E = 500mA, IC = 0

Collector cutoff current

CES

—

500

µAV

CE = 1500V, RBE = 0

DC current transfer ratio

FE1

—

CE = 5 V, IC = 1A

DC current transfer ratio

FE2

4—

CE = 5 V, IC = 10A

Collector to emitter saturation

voltage

CE(sat)

——

C =

10A, I

B = 2.5A

Base to emitter saturation

voltage

BE(sat)

—

1.5

C =

10A, I

B = 2.5A

Collector to emitter diode

forward voltage

ECF

——

F = 14A

Fall time

—

0.2

0.4

µsI

CP = 7A, IB1= 2.4A

H = 31.5kHz

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