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LED1050G-33

v 1.0 12.01.2016

Description

LED1050G-33 contains a GaAs LED mounted on a lead frame hermetically sealed with a clear epoxy

lens.

On forward bias, it emits a power radiation of typical 17 mW at a peak wavelength at 1050 nm.

Parameter

Symbol

Values

Min.

Max.

Unit

Power Dissipation

140

mW

Forward Current

100

mA

Pulse Forward Current *

1

1000

mA

Reverse Voltage

5

V

Thermal Resistance

250

K/W

Junction Temperature

100

°C

Operating Temperature

- 40

+ 85

°C

Storage Temperature

- 40

+ 100

°C

Lead Solder Temperature *

2

+ 265

°C

*

*

*

*

Parameter

Symbol Conditions

Values

Min.

Typ.

Max.

Unit

Peak Wavelength

1050

nm

Half Width

∆λ

33

nm

Forward Voltage

1.2

1.4

V

Radiated Power *

1

17

mW

Radiant Intensity *

2

40

mW/sr

Viewing Angle

φ

42

deg.

Rise Time

40

ns

Fall Time

30

ns