CMM2030 datasheet(2/4 Pages) ETC

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CMM2030-BD

Advanced Product Information - February 2003

(2 of 4)

Absolute Maximum Ratings

Parameter

Rating

Drain Voltage

12 V

Gate Voltage

-5 V

Drain Current

375 mA

Continuous Power Dissipation

3.0 W

Channel Temperature

+175°C

Storage Temperature

-65°C to +175°C

Mounting Temperature

+320°C

Input Power

+23 dBm

Die Attach and Bonding Procedures

Die Attach: Eutectic die attach is recommended. For eutec-

tic die attach: Preform: AuSn (80% Au, 20% Sn); Stage

Temperature: 290°C, ±5°C; Handling Tool: Tweezers; Time: 1

min or less.

Wire Bonding: Wire Size: 0.7 to 1.0 mil in diameter (pre-

stressed); Thermocompression bonding is preferred over

thermosonic bonding.

For thermocompression bonding:

Stage Temperature: 250°C; Bond Tip Temperature: 150°C;

Bonding Tip Pressure: 18 to 40 gms depending on size of

wire.

Performance Optimization

Using the Gain-Ctl facility of the CMM2030-BD, out-

put power may be increased by application of 1.2 to 1.8 Volts

to the Bias Control pad. If the Gain-Ctl facility is not used, a

fixed voltage at the Bias Control pad can be implemented by

connecting a off-chip parallel resistor to the pad which will

lower the output voltage accordingly.

If Bias Control voltage is decreased further than those

lowest values given in the tables, both gain and output power

will start to drop.

Typical Performance

P1dB vs Frequency

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