Feb.1999

23

4

2

23

44

6

8

10

3

1

5

7

9

0

3.8

0.6

1.4

2.2

3.0

1.0

1.8

2.6

3.4

7

5

3

2

7

5

3

2

7

5

3

2

°C

MAXIMUM ON-STATE CHARACTERISTICS

ON-STATE VOLTAGE (V)

RATED SURGE ON-STATE CURRENT

CONDUCTION TIME

(CYCLES AT 60Hz)

MITSUBISHI SEMICONDUCTOR

〈TRIAC〉

BCR2PM

LOW POWER USE

INSULATED TYPE, PLANAR PASSIVATION TYPE

V2. Measurement using the gate trigger characteristics measurement circuit.

Symbol

Test conditions

Junction to ambient, Natural convection

Unit

mA

V

V

V

mA

mA

V

°C/W

Typ.

—

—

—

—

—

—

—

—

@

#

@

#

ELECTRICAL CHARACTERISTICS

Limits

Min.

—

—

—

—

—

—

0.1

—

Max.

0.5

1.6

2.0

2.0

10

10

—

40

PERFORMANCE CURVES

6

Ω

6

Ω

6V

6V

A

V

A

V

TEST PROCEDURE 3

TEST PROCEDURE 2

GATE TRIGGER CHARACTERISTICS TEST CIRCUITS

Parameter

Repetitive peak off-state current

On-state voltage

Gate trigger current

V2

Gate non-trigger voltage

Thermal resistance