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công cụ tìm kiếm bảng dữ liệu linh kiện điện tử |
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công cụ tìm kiếm bảng dữ liệu linh kiện điện tử |
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NCE2007N bảng dữ liệu(PDF) 1 Page - Wuxi NCE Power Semiconductor Co., Ltd |
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NCE2007N bảng dữ liệu(HTML) 1 Page - Wuxi NCE Power Semiconductor Co., Ltd |
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1 / 7 page  Wuxi NCE Power Semiconductor Co., Ltd Page v1.0 1 NCE2007N Pb Free Product http://www.ncepower.com SNCE N-Channel Enhancement Mode Power MOSFET Description The NCE2007N uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features ● VDS = 20V,ID =6.5A RDS(ON) < 27mΩ @ VGS=2.5V RDS(ON) < 22mΩ @ VGS=4.5V ● High power and current handing capability ● Lead free product is acquired ● Surface mount package Application ● Battery protection ● Load switch ● Power management G1 D2 G2 S2 D1 S1 Schematic diagram Marking and pin assignment SOT23-6L top view Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity 2007N NCE2007N SOT23-6L Ø330mm 12mm 3000 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±12 V Drain Current-Continuous ID 6.5 A Drain Current-Pulsed (Note 1) IDM 25 A Maximum Power Dissipation PD 1.5 W Operating Junction and Storage Temperature Range TJ,TSTG -55 To 150 ℃ Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) RθJA 83 /W ℃ Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics |
Số phần tương tự - NCE2007N |
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Mô tả tương tự - NCE2007N |
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